是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.25 | 最大集电极电流 (IC): | 3 A |
集电极-发射极最大电压: | 45 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 40 | JEDEC-95代码: | TO-126 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | MATTE TIN (315) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 10 | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 3 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
BD17610 | FAIRCHILD | Power Bipolar Transistor, 3A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ |
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BD176-10 | FAIRCHILD | 3 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-126 |
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BD17610STU | ROCHESTER | 3A, 45V, PNP, Si, POWER TRANSISTOR, TO-126 |
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BD17610STU | FAIRCHILD | PNP Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), |
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BD17610STU | ONSEMI | PNP外延硅晶体管 |
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BD176-16 | FAIRCHILD | 3 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-126 |
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BD176-6 | SAMSUNG | Power Bipolar Transistor, 3A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ |
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BD176-6 | FAIRCHILD | 3 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-126 |
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BD176LEADFREE | CENTRAL | Power Bipolar Transistor, 3A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ |
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BD177 | ISC | Silicon NPN Power Transistors |
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