BD176/178/180
Medium Power Linear and Switching
Applications
•
Complement to BD 175/177/179 respectively
TO-126
1. Emitter 2.Collector 3.Base
1
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
*Collector-Base Voltage
Collector-Emitter Voltage
: BD176
: BD178
: BD180
- 45
- 60
- 80
V
V
V
CBO
: BD176
: BD178
: BD180
- 45
- 60
- 80
V
V
V
CEO
V
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
- 5
- 3
V
A
EBO
I
I
C
- 7
A
C
P
Collector Dissipation (T =25°C)
30
W
°C
°C
C
C
T
T
Junction Temperature
Storage Temperature
150
J
- 65 ~ 150
STG
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max. Units
V
(sus)
* Collector-Emitter Sustaining Voltage
CEO
: BD176
: BD178
: BD180
I = - 100mA, I = 0
- 45
- 60
- 80
V
V
V
C
B
I
Collector Cut-off Current : BD176
V
V
V
= - 45V, I = 0
- 100
- 100
- 100
µA
µA
µA
CBO
CB
CB
CB
E
: BD178
: BD180
= - 60V, I = 0
E
= - 80V, I = 0
E
I
Emitter Cut-off Current
* DC Current Gain
V
= - 5V, I = 0
- 1
mA
EBO
EB
C
h
h
V
V
= - 2V, I = - 150mA
40
15
250
FE1
FE2
CE
CE
C
= - 2V, I = - 1A
C
V
V
(sat)
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
I = -1 A , I = - 0.1A
- 0.8
- 1.3
V
V
CE
C
B
(on)
V
= - 2V, I = -1 A
C
BE
CE
CE
f
Current Gain Bandwidth Product
V
= -10V, I = - 250mA
3
MHz
T
C
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
h
Classificntion
FE
Classification
6
10
16
100 ~ 250
h
40 ~ 100
63 ~ 160
FE1
* Classification 16: Only BD 176
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001