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BCX79L34Z PDF预览

BCX79L34Z

更新时间: 2024-11-18 19:54:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
7页 300K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN

BCX79L34Z 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.68
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):800 ns
最大开启时间(吨):150 nsBase Number Matches:1

BCX79L34Z 数据手册

 浏览型号BCX79L34Z的Datasheet PDF文件第2页浏览型号BCX79L34Z的Datasheet PDF文件第3页浏览型号BCX79L34Z的Datasheet PDF文件第4页浏览型号BCX79L34Z的Datasheet PDF文件第5页浏览型号BCX79L34Z的Datasheet PDF文件第6页浏览型号BCX79L34Z的Datasheet PDF文件第7页 
BCX79  
TO-92  
E
B
C
PNP General Purpose Amplifier  
This device is designed for use as general purpose amplifiers  
and switches requiring collector currents to 300 mA. Sourced from  
Process 68. See PN200A for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCES  
VEBO  
IC  
Collector-Emitter Voltage  
45  
45  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
5.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
500  
mA  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
BCX79  
PD  
Total Device Dissipation  
Derate above 25 C  
625  
5.0  
mW  
mW/ C  
°
°
Thermal Resistance, Junction to Case  
83.3  
Rθ  
C/W  
°
JC  
Thermal Resistance, Junction to Ambient  
200  
Rθ  
C/W  
°
JA  
1997 Fairchild Semiconductor Corporation  

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