Datasheet > BCX7K

BCX7K

更新时间： 2024-09-26 08:50:55

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
3页	1077K
描述
TRANSISTOR (NPN)

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中文翻译

获取价格

数据手册

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BCX7K 数据手册

BCX70J,K

TRANSISTOR (NPN)

SOT-23

FEATURES

Low current

Low voltage

1. BASE

2. EMITTER

3. COLLECTOR

MARKING : BCX70J：AJ, BCX70K:AK

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

Parameter

Value

Units

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

200

250

150

-55-150

℃

P_C

T_j

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CES

Test

I_C=10μA,I_E=0

I_C=2mA,I_B=0

I_E=1μA,I_C=0

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_CE=45V,V_BE=0

h_FE1

V_CE=5V,I_C=10μA

250

DC current gain

BCX70J

BCX70K

h_FE2

V_CE=5V,I_C=2mA

460

h_FE3

V_CE=1V,I_C=50mA

h_FE1

V_CE=5V,I_C=10μA

100

380

100

0.05

0.1

h_FE2

V_CE=5V,I_C=2mA

630

h_FE3

V_CE=1V,I_C=50mA

V_CE(sat)1

V_CE(sat)2

V_BE(sat)1

V_BE(sat)2

V_BE

I_C= 10mA I_B= 0.25 mA

I_C= 50mA I_B=1.25 mA

I_C= 10mA I_B=-0.25 mA

I_C= 50mA I_B= 1.25 mA

V_CE=5V,I_C=2mA

0.35

0.55

0.85

1.05

0.75

Collector-emitter saturation voltage

Base -emitter saturation voltage

0.6

0.7

Base-emitter voltage

0.55

Collector output capacitance

C_ob

V_CB=10V,I_E=0,f=1MHz

V_CE=5V,I_C=200μA,

f=1KHz,BW=200Hz,RS=2KΩ

V_CE= 5 V, I_C=10mA,f =100 MHz

1.7

Noise Figure

f_T

Gain-Bandwidth Product

100

250

MHz

JinYu

semiconductor

www.htsemi.com

Date:2011/05

12 3

中文翻译

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