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BCX71G_02 PDF预览

BCX71G_02

更新时间: 2024-10-28 04:09:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管
页数 文件大小 规格书
3页 46K
描述
General Purpose Transistor

BCX71G_02 数据手册

 浏览型号BCX71G_02的Datasheet PDF文件第2页浏览型号BCX71G_02的Datasheet PDF文件第3页 
BCX71G  
General Purpose Transistor  
3
2
SOT-23  
1
1. Base 2. Emitter 3. Collector  
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
-45  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
-45  
V
CEO  
EBO  
-5.0  
-100  
350  
150  
V
I
mA  
mW  
°C  
C
P
Collector Power Dissipation  
C
T
Storage Temperature  
STG  
Refer to KST5086 for graphs  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Test Condition  
Min.  
Max.  
Units  
BV  
I = -2mA, I =0  
-45  
-5  
V
V
CEO  
EBO  
C
B
BV  
I = -1µA, I =0  
E C  
I
V
= -32V, V =0  
-20  
nA  
CES  
CE  
BE  
h
DC Current Gain  
V
V
= -5V, I = -2mA  
120  
60  
220  
FE  
CE  
CE  
C
= -1V, I = -50µA  
C
V
V
V
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
I = -10mA, I = -0.25mA  
-0.25  
-0.55  
V
V
CE  
BE  
BE  
C
B
I = -50mA, I = -1.25mA  
C
B
(sat)  
(on)  
I = -10mA, I = -0.25mA  
-0.6  
-0.68  
-0.85  
-1.05  
V
V
C
B
I = -50mA, I = -1.25mA  
C
B
Base-Emitter On Voltage  
Output Capactance  
Noise Figure  
V
= -5V, I = -2mA  
-0.6  
-0.75  
V
CE  
CB  
C
C
V
= -10V, I =0, f=1MHz  
pF  
dB  
ob  
E
NF  
I =0.2mA, V =5V  
C CE  
6
f=1KHz, R =2KΩ  
S
t
t
Turn On Time  
Turn Off Time  
I = -10mA, I = -1mA  
150  
800  
ns  
ns  
ON  
C
B1  
I
= -1mA, V =3.6V  
BB  
OFF  
B2  
R =990Ω  
L
Marking  
BG  
©2002 Fairchild Semiconductor Corporation  
Rev. A1, April 2002  

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