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BCX18LT1G PDF预览

BCX18LT1G

更新时间: 2024-01-07 14:39:04
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
4页 125K
描述
General Purpose Transistors

BCX18LT1G 技术参数

是否无铅: 不含铅生命周期:End Of Life
零件包装代码:SOT-23包装说明:HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, TO-236, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.23最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
Base Number Matches:1

BCX18LT1G 数据手册

 浏览型号BCX18LT1G的Datasheet PDF文件第2页浏览型号BCX18LT1G的Datasheet PDF文件第3页浏览型号BCX18LT1G的Datasheet PDF文件第4页 
BCX18LT1G, PNP  
BCX19LT1G, NPN  
General Purpose  
Transistors  
Voltage and Current are Negative for  
PNP Transistors  
http://onsemi.com  
PNP  
NPN  
Features  
COLLECTOR  
3
COLLECTOR  
3
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
1
BASE  
1
BASE  
2
EMITTER  
2
EMITTER  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
3
Collector Emitter Voltage  
BCX19LT1  
BCX18LT1  
V
CEO  
Vdc  
45  
25  
1
Collector Base Voltage  
BCX19LT1  
BCX18LT1  
V
Vdc  
2
CBO  
50  
30  
SOT23  
CASE 318  
STYLE 6  
Emitter Base Voltage  
V
5.0  
Vdc  
EBO  
Collector Current Continuous  
I
C
500  
mAdc  
MARKING DIAGRAM  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR5 Board  
P
225  
mW  
D
xx M G  
(Note 1), T = 25°C  
A
G
Derate above 25°C  
1.8  
mW/°C  
°C/W  
1
Thermal Resistance,  
JunctiontoAmbient  
xx  
M
G
= T2 or U1  
= Date Code*  
= PbFree Package  
R
q
556  
JA  
Total Device Dissipation Alumina  
P
D
Substrate, (Note 2) T = 25°C  
300  
2.4  
mW  
mW/°C  
A
(Note: Microdot may be in either location)  
Derate above 25°C  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
Thermal Resistance,  
JunctiontoAmbient  
R
417  
°C/W  
°C  
q
JA  
Junction and Storage Temperature  
T , T  
J
55 to +150  
stg  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
August, 2009 Rev. 0  
BCX18LT1/D  
 

BCX18LT1G 替代型号

型号 品牌 替代类型 描述 数据表
MMBT4403LT1G ONSEMI

类似代替

Switching Transistor(PNP Silicon)
BCX18LT1 ONSEMI

类似代替

General Purpose Transistors
BCX18,215 NXP

功能相似

BCX17; BCX18 - PNP general purpose transistors TO-236 3-Pin

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