BCW72LT1

更新时间： 2024-02-19 10:29:12

品牌	Logo	应用领域
安森美 - ONSEMI		晶体小信号双极晶体管光电二极管
页数	文件大小	规格书
8页	418K
描述
General Purpose Transistor(NPN Silicon)

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中文翻译

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技术参数
数据手册
替代型号

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BCW72LT1 技术参数

是否无铅：	不含铅	生命周期：	Active
零件包装代码：	SOT-23	包装说明：	SMALL OUTLINE, R-PDSO-G3
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.21.00.75
Factory Lead Time：	1 week	风险等级：	0.58
Samacsys Confidence：	3	Samacsys Status：	Released
Samacsys PartID：	224506	Samacsys Pin Count：	3
Samacsys Part Category：	Transistor	Samacsys Package Category：	SOT23 (3-Pin)
Samacsys Footprint Name：	SOT-23 (TO-236) CASE 318-08	Samacsys Released Date：	2015-07-24 09:18:38
Is Samacsys：	N	最大集电极电流 (IC)：	0.1 A
集电极-发射极最大电压：	45 V	配置：	SINGLE
最小直流电流增益 (hFE)：	200	JEDEC-95代码：	TO-236AB
JESD-30 代码：	R-PDSO-G3	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.225 W
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Tin (Sn)
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	40	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	300 MHz
Base Number Matches：	1

BCW72LT1 数据手册

INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total

design. The footprint for the semiconductor packages must

be the correct size to insure proper solder connection

interface between the board and the package. With the

correct pad geometry, the packages will self align when

subjected to a solder reflow process.

0.037

0.95

0.037

0.95

0.079

2.0

0.035

0.9

0.031

0.8

inches

SOT–23

SOT–23 POWER DISSIPATION

The power dissipation of the SOT–23 is a function of the

SOLDERING PRECAUTIONS

pad size. This can vary from the minimum pad size for

soldering to a pad size given for maximum power dissipation.

Power dissipation for a surface mount device is determined

The melting temperature of solder is higher than the rated

temperature of the device. When the entire device is heated

to a high temperature, failure to complete soldering within a

short time could result in device failure. Therefore, the

following items should always be observed in order to

minimize the thermal stress to which the devices are

subjected.

by T

, the maximum rated junction temperature of the

, the thermal resistance from the device junction to

J(max)

die, R

θJA

ambient, and the operating temperature, T . Using the

values provided on the data sheet for the SOT–23 package,

can be calculated as follows:

•

Always preheat the device.

The delta temperature between the preheat and

soldering should be 100°C or less.*

– T

J(max)

θJA

•

When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum

temperature ratings as shown on the data sheet. When

using infrared heating with the reflow soldering method,

the difference shall be a maximum of 10°C.

The values for the equation are found in the maximum

ratings table on the data sheet. Substituting these values into

the equation for an ambient temperature T of 25°C, one can

calculate the power dissipation of the device which in this

case is 225 milliwatts.

•

The soldering temperature and time shall not exceed

260°C for more than 10 seconds.

When shifting from preheating to soldering, the

maximum temperature gradient shall be 5°C or less.

After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes.

Gradual cooling should be used as the use of forced

cooling will increase the temperature gradient and result

in latent failure due to mechanical stress.

150°C – 25°C

556°C/W

= 225 milliwatts

The 556°C/W for the SOT–23 package assumes the use

of the recommended footprint on a glass epoxy printed circuit

board to achieve a power dissipation of 225 milliwatts. There

are other alternatives to achieving higher power dissipation

from the SOT–23 package. Another alternative would be to

use a ceramic substrate or an aluminum core board such as

Thermal Clad . Using a board material such as Thermal

Clad, an aluminum core board, the power dissipation can be

doubled using the same footprint.

•

Mechanical stress or shock should not be applied during

cooling.

* Soldering a device without preheating can cause excessive

thermal shock and stress which can result in damage to the

device.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

1...4 5 678

中文翻译

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BCW72LT1 替代型号

型号	品牌	替代类型	描述	数据表
BCW72LT1G	ONSEMI	类似代替	General Purpose Transistor
BCW72,235	NXP	功能相似	BCW71; BCW72 - NPN general purpose transistors TO-236 3-Pin

与BCW72LT1相关器件

型号	品牌	获取价格	描述	数据表
BCW72LT1/D	ETC	获取价格	General Purpose Transistor NPN
BCW72LT1D	ONSEMI	获取价格	General Purpose Transistor
BCW72LT1G	ONSEMI	获取价格	General Purpose Transistor
BCW72LT3	MOTOROLA	获取价格	100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
BCW72LX	ALLEGRO	获取价格	Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
BCW72R	NXP	获取价格	TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa
BCW72R	VISHAY	获取价格	TRANSISTOR NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AA, MICRO MINIATURE PACKAGE-3, BIP Gene
BCW72R	ALLEGRO	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), NPN
BCW72RL	VISHAY	获取价格	TRANSISTOR SMALL SIGNAL TRANSISTOR, TO-236AB, TO-236AB, 3 PIN, BIP General Purpose Small S
BCW72RLK	ALLEGRO	获取价格	Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

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