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BCW72LT1 PDF预览

BCW72LT1

更新时间: 2024-02-08 16:50:49
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
8页 418K
描述
General Purpose Transistor(NPN Silicon)

BCW72LT1 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
Factory Lead Time:1 week风险等级:0.58
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:224506Samacsys Pin Count:3
Samacsys Part Category:TransistorSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SOT-23 (TO-236) CASE 318-08Samacsys Released Date:2015-07-24 09:18:38
Is Samacsys:N最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):200JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.225 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
Base Number Matches:1

BCW72LT1 数据手册

 浏览型号BCW72LT1的Datasheet PDF文件第1页浏览型号BCW72LT1的Datasheet PDF文件第3页浏览型号BCW72LT1的Datasheet PDF文件第4页浏览型号BCW72LT1的Datasheet PDF文件第5页浏览型号BCW72LT1的Datasheet PDF文件第6页浏览型号BCW72LT1的Datasheet PDF文件第7页 
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
ON CHARACTERISTICS  
DC Current Gain  
(I = 2.0 mAdc, V  
C CE  
h
FE  
= 5.0 Vdc)  
200  
450  
CollectorEmitter Saturation Voltage  
(I = 10 mAdc, I = 0.5 mAdc)  
V
V
Vdc  
CE(sat)  
0.21  
0.25  
C
B
(I = 50 mAdc, I = 2.5 mAdc)  
C
B
BaseEmitter Saturation Voltage  
(I = 50 mAdc, I = 2.5 mAdc)  
Vdc  
Vdc  
BE(sat)  
0.85  
C
B
BaseEmitter On Voltage  
(I = 2.0 mAdc, V = 5.0 Vdc)  
V
BE(on)  
0.6  
0.75  
C
CE  
SMALLSIGNAL CHARACTERISTICS  
CurrentGain — Bandwidth Product  
f
300  
4.0  
MHz  
pF  
T
(I = 10 mAdc, V  
C CE  
= 5.0 Vdc, f = 100 MHz)  
Output Capacitance  
(I = 0, V = 10 Vdc, f = 1.0 MHz)  
C
obo  
E
CB  
Input Capacitance  
(I = 0, V = 10 Vdc, f = 1.0 MHz)  
C
9.0  
pF  
ibo  
E
CB  
Noise Figure  
NF  
10  
dB  
(I = 0.2 mAdc, V  
C
= 5.0 Vdc, R = 2.0 k, f = 1.0 kHz,  
S
CE  
BW = 200 Hz)  
EQUIVALENT SWITCHING TIME TEST CIRCUITS  
+3.0 V  
+3.0 V  
t
10 < t < 500 µs  
DUTY CYCLE = 2%  
1
1
300 ns  
DUTY CYCLE = 2%  
+10.9 V  
<1.0 ns  
275  
275  
+10.9 V  
10 k  
10 k  
0
0.5 V  
<1.0 ns  
C
< 4.0 pF*  
C < 4.0 pF*  
S
S
9.1 V  
1N916  
*Total shunt capacitance of test jig and connectors  
Figure 1. Turn–On Time  
Figure 2. Turn–Off Time  
TYPICAL NOISE CHARACTERISTICS  
(V  
= 5.0 Vdc, T = 25°C)  
CE  
A
20  
10  
100  
I
= 1.0 mA  
300  
BANDWIDTH = 1.0 Hz  
C
BANDWIDTH = 1.0 Hz  
= 0  
50  
20  
I
= 1.0 mA  
R
≈∞  
R
C
S
S
µA  
300 µA  
100 µA  
10  
5.0  
7.0  
5.0  
100  
µA  
2.0  
1.0  
10  
µA  
30  
µA  
0.5  
0.2  
30  
µA  
3.0  
2.0  
10 µA  
0.1  
10  
20  
50  
100  
200  
500  
1 k  
2 k  
5 k  
10 k  
10  
20  
50  
100  
200  
500  
1 k  
2 k  
5 k  
10 k  
f, FREQUENCY (Hz)  
f, FREQUENCY (Hz)  
Figure 3. Noise Voltage  
Figure 4. Noise Current  
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
2

BCW72LT1 替代型号

型号 品牌 替代类型 描述 数据表
BCW72LT1G ONSEMI

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