Datasheet > BCW70/E8

BCW70/E8

更新时间： 2024-01-27 18:27:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
2页	28K
描述
TRANSISTOR \| BJT \| PNP \| 45V V(BR)CEO \| 100MA I(C) \| SOT-23

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中文翻译

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技术参数
数据手册

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BCW70/E8 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.82	Is Samacsys：	N
最大集电极电流 (IC)：	0.1 A	配置：	Single
JESD-609代码：	e3	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.25 W
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Matte Tin (Sn)	标称过渡频率 (fT)：	100 MHz
Base Number Matches：	1

BCW70/E8 数据手册

BCW69 and BCW70

New Product

Vishay Semiconductors

formerly General Semiconductor

Small Signal Transistor (PNP)

TO-236AB (SOT-23)

.122 (3.1)

.110 (2.8)

.016 (0.4)

Top View

Mounting Pad Layout

0.031 (0.8)

Pin Configuration

1 = Base 2 = Emitter

3 = Collector

0.035 (0.9)

0.079 (2.0)

.037(0.95)

0.037 (0.95)

.102 (2.6)

.094 (2.4)

.016 (0.4) .016 (0.4)

Dimensions in inches and (millimeters)

Mechanical Data

Features

Case: SOT-23 Plastic Package

Weight: approx. 0.008g

Marking Code: BCW69 = H1

BCW70 = H2

• PNP Silicon Epitaxial Planar Transistors

• Suited for low level, general purpose applications.

• Low current, low voltage.

• As complementary types, BCW71 and BCW72

NPN transistors are recommended.

Packaging Codes/Options:

E8/10K per 13” reel (8mm tape), 30K/box

E9/3K per 7” reel (8mm tape), 30K/box

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol

–V_CBO

–V_CEO

–V_EBO

–I_C

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

5.0

Collector Current

100

°C/W

°C

Peak Collector Current

Peak Base Current

–I_CM

–I_BM

P_tot

200

Power Dissipation

250

Thermal Resistance Junction to Ambient Air

Junction Temperature

R_ΘJA

T_j

500⁽¹⁾

150

Storage Temperature Range

Note: (1) Mounted on FR-4 printed-circuit board.

T_STG

–65 to +150

°C

Document Number 88174

09-May-02

www.vishay.com

中文翻译

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