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BCW70LT1G PDF预览

BCW70LT1G

更新时间: 2024-02-28 02:05:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
6页 262K
描述
General Purpose Transistor

BCW70LT1G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-23
包装说明:HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:5.28
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):215
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:NOT SPECIFIED
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:COMMERCIAL
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
Base Number Matches:1

BCW70LT1G 数据手册

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BCW70LT1G  
General Purpose Transistor  
PNP Silicon  
Features  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
http://onsemi.com  
Compliant  
COLLECTOR  
3
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
EmitterBase Voltage  
Symbol  
Value  
45  
Unit  
Vdc  
1
BASE  
V
CEO  
EBO  
V
5.0  
100  
Vdc  
2
Collector Current Continuous  
I
C
mAdc  
EMITTER  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
3
Total Device Dissipation FR-5 Board  
P
225  
mW  
D
(Note 1) T = 25°C  
A
1
Derate above 25°C  
1.8  
556  
300  
mW/°C  
°C/W  
mW  
2
Thermal Resistance, JunctiontoAmbient  
R
q
JA  
SOT23 (TO236AB)  
CASE 318  
Total Device Dissipation Alumina  
P
D
Substrate, (Note 2) @T = 25°C  
A
STYLE 6  
Derate above 25°C  
2.4  
417  
mW/°C  
°C/W  
°C  
Thermal Resistance, JunctiontoAmbient  
Junction and Storage Temperature  
R
q
JA  
MARKING DIAGRAM  
T , T  
J
55 to +150  
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR5 = 1.0 x 0.75 x 0.062 in.  
H2 M G  
G
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina  
1
H2 = Device Code  
M
= Date Code*  
G
= PbFree Package  
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may vary  
depending upon manufacturing location.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
BCW70LT1G  
SOT23  
3000 / Tape & Reel  
(PbFree)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
August, 2009 Rev. 3  
BCW70LT1/D  
 

BCW70LT1G 替代型号

型号 品牌 替代类型 描述 数据表
BCW70LT1 ONSEMI

完全替代

General Purpose Transistors(PNP Silicon)
BC860BMTF ONSEMI

类似代替

PNP外延硅晶体管
BC857BMTF ONSEMI

类似代替

PNP外延硅晶体管

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