是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | compliant | HTS代码: | 8541.21.00.95 |
风险等级: | 5.03 | 基于收集器的最大容量: | 6 pF |
集电极-发射极最大电压: | 32 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 160 | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | MATTE TIN (315) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 10 | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 200 MHz | VCEsat-Max: | 0.7 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCW67C | INFINEON |
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PNP Silicon AF Transistors (For general AF applications High current gain) | |
BCW67C | DIOTEC |
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Surface mount Si-Epitaxial PlanarTransistors | |
BCW67C | CENTRAL |
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SURFACE MOUNT PNP SILICON TRANSISTOR | |
BCW67C | BL Galaxy Electrical |
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32V,0.8A,General Purpose PNP Bipolar Transistor | |
BCW67-C | INFINEON |
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1000mA, 32V, PNP, Si, SMALL SIGNAL TRANSISTOR | |
BCW67CBK | CENTRAL |
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Small Signal Bipolar Transistor, 32V V(BR)CEO, 1-Element, PNP, Silicon, | |
BCW67CBKLEADFREE | CENTRAL |
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Small Signal Bipolar Transistor, 32V V(BR)CEO, 1-Element, PNP, Silicon, | |
BCW67C-DC | DIODES |
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SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS | |
BCW67CE6327 | INFINEON |
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Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon | |
BCW67CE6327HTSA1 | INFINEON |
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Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, |