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BCW30LT1 PDF预览

BCW30LT1

更新时间: 2024-01-08 14:57:01
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
8页 348K
描述
General Purpose Transistors(PNP Silicon)

BCW30LT1 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
最大集电极电流 (IC):0.1 A配置:Single
最小直流电流增益 (hFE):215最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):0.225 W
子类别:Other Transistors表面贴装:YES
Base Number Matches:1

BCW30LT1 数据手册

 浏览型号BCW30LT1的Datasheet PDF文件第2页浏览型号BCW30LT1的Datasheet PDF文件第3页浏览型号BCW30LT1的Datasheet PDF文件第4页浏览型号BCW30LT1的Datasheet PDF文件第5页浏览型号BCW30LT1的Datasheet PDF文件第6页浏览型号BCW30LT1的Datasheet PDF文件第8页 
BCW30LT1  
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE  
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS  
Surface mount board layout is a critical portion of the  
total design. The footprint for the semiconductor packages  
must be the correct size to insure proper solder connection  
interface between the board and the package. With the  
correct pad geometry, the packages will self align when  
subjected to a solder reflow process.  
0.037  
0.95  
0.037  
0.95  
0.079  
2.0  
0.035  
0.9  
0.031  
0.8  
inches  
mm  
SOT–23  
SOT–23 POWER DISSIPATION  
The power dissipation of the SOT–23 is a function of the  
SOLDERING PRECAUTIONS  
pad size. This can vary from the minimum pad size for  
soldering to a pad size given for maximum power dissipation.  
Power dissipation for a surface mount device is determined  
The melting temperature of solder is higher than the  
rated temperature of the device. When the entire device is  
heated to a high temperature, failure to complete soldering  
within a short time could result in device failure. Therefore,  
the following items should always be observed in order to  
minimize the thermal stress to which the devices are  
subjected.  
by T  
die, R  
, the maximum rated junction temperature of the  
, the thermal resistance from the device junction to  
J(max)  
θJA  
ambient, and the operating temperature, T . Using the values  
provided on the data sheet for the SOT–23 package, P can  
A
D
be calculated as follows:  
Always preheat the device.  
T
– T  
A
The delta temperature between the preheat and  
soldering should be 100°C or less.*  
J(max)  
P
=
D
R
θJA  
When preheating and soldering, the temperature of the  
leads and the case must not exceed the maximum  
temperature ratings as shown on the data sheet. When  
using infrared heating with the reflow soldering  
method, the difference shall be a maximum of 10°C.  
The soldering temperature and time shall not exceed  
260°C for more than 10 seconds.  
When shifting from preheating to soldering, the  
maximum temperature gradient shall be 5°C or less.  
After soldering has been completed, the device should  
be allowed to cool naturally for at least three minutes.  
Gradual cooling should be used as the use of forced  
cooling will increase the temperature gradient and  
result in latent failure due to mechanical stress.  
Mechanical stress or shock should not be applied  
during cooling.  
The values for the equation are found in the maximum  
ratings table on the data sheet. Substituting these values  
into the equation for an ambient temperature T of 25°C,  
A
one can calculate the power dissipation of the device which  
in this case is 225 milliwatts.  
150°C – 25°C  
556°C/W  
P
=
= 225 milliwatts  
D
The 556°C/W for the SOT–23 package assumes the use of  
the recommended footprint on a glass epoxy printed circuit  
board to achieve a power dissipation of 225 milliwatts.  
There are other alternatives to achieving higher power  
dissipation from the SOT–23 package. Another alternative  
would be to use a ceramic substrate or an aluminum core  
board such as Thermal Clad . Using a board material such  
as Thermal Clad, an aluminum core board, the power  
dissipation can be doubled using the same footprint.  
* Soldering a device without preheating can cause  
excessive thermal shock and stress which can result in  
damage to the device.  
http://onsemi.com  
7

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