生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.42 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 20 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 60 | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 60 MHz | VCEsat-Max: | 0.5 V |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCP69-10-TAPE-7 | NXP |
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TRANSISTOR 1 A, 20 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power |
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BCP69-16 | TYSEMI |
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High current. Three current gain selections. 1.4 W total power dissipation. |
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BCP69-16 | NXP |
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PNP medium power transistor |
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BCP69-16 | INFINEON |
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PNP Silicon AF Transistor (For general AF application High collector current High current |
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BCP69-16 | NEXPERIA |
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20 V, 2 A PNP medium power transistorProduction |
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BCP69-16 | BL Galaxy Electrical |
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20V,1A,General Purpose NPN Bipolar Transistor |
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BCP69-16,115 | NXP |
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20 V, 2 A PNP medium power transistor SC-73 4-Pin |
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BCP69-16/DG | NXP |
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20 V, 1 A PNP medium power transistor |
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BCP69-16/DG,115 | NXP |
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20 V, 1 A PNP medium power transistor; Package: SOT223 (SC-73); Container: Tape reel smd |
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BCP69-16/IN | NXP |
获取价格 |
20 V, 1 A PNP medium power transistor |
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