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BCM847BS PDF预览

BCM847BS

更新时间: 2024-09-25 19:47:19
品牌 Logo 应用领域
德欧泰克 - DIOTEC 放大器光电二极管晶体管
页数 文件大小 规格书
2页 176K
描述
Small Signal Bipolar Transistor,

BCM847BS 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.68Is Samacsys:N
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BCM847BS 数据手册

 浏览型号BCM847BS的Datasheet PDF文件第2页 
BCM846BS, BCM847BS  
BCM846BS, BCM847BS  
IC  
= 100 mA  
VCEO = 45 V, 65 V  
Ptot = 250 mW  
hFE = 200...450  
Tjmax = 150°C  
SMD Matched NPN Transistors  
SMD Abgeglichene NPN-Transistoren  
Version 2018-12-06  
Typical Applications  
Current mirrors  
Typische Anwendungen  
Stromspiegel  
Differential amplifiers  
Differenzverstärker  
Standardausführung  
SOT-363  
Commercial grade  
Suffix -Q: AEC-Q101 compliant 1)  
Suffix -AQ: in AEC-Q101 qualification 1)  
Suffix -Q: AEC-Q101 konform 1)  
Suffix -AQ: in AEC-Q101 Qualifikation 1)  
2±0.1  
2 x 0.65  
Features  
Besonderheiten  
Zwei Transistoren in einem Gehäuse  
mit abgeglichener Stromverstärkung  
und Basis-Emitter-Spannung  
0.9±0.1  
Two transistors in one package  
with matched current gain and  
Base-Emitter voltage  
Compliant to RoHS, REACH,  
Conflict Minerals 1)  
5
4
6
R
Type  
Code  
Konform zu RoHS, REACH,  
Konfliktmineralien 1  
V
1
2
3
Mechanical Data 1)  
Mechanische Daten 1)  
2.4  
Taped and reeled  
3000 / 7“  
Gegurtet auf Rolle  
Gewicht ca.  
Weight approx.  
0.01 g  
UL 94V-0  
260°C/10s  
MSL = 1  
Case material  
Gehäusematerial  
Dimensions - Maße [mm]  
Solder & assembly conditions  
Löt- und Einbaubedingungen  
Type Code  
6
5
4
BCM846BS  
Dual  
Transistors  
T1  
1 = E1 2 = B1 6 = C1  
T2  
3 = C2 4 = E2 5 = B2  
T2  
1B  
T1  
BCM847BS  
1
2
3
1F  
Maximum ratings 2)  
Grenzwerte 2)  
BCM847BS  
BCM846BS  
Collector-Emitter-voltage – Kollektor-Emitter-Spannung  
Collector-Base-voltage – Kollektor-Basis-Spannung  
Emitter-Base-voltage – Emitter-Basis-Spannung  
Power dissipation – Verlustleistung  
B open  
E open  
C open  
VCEO  
VCBO  
VEBO  
Ptot  
65 V  
80 V  
45 V  
50 V  
6 V  
250 mW 3)  
Collector current – Kollektorstrom  
DC  
IC  
100 mA  
200 mA  
Peak Collector current – Kollektor-Spitzenstrom  
ICM  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
TS  
Tj  
-55...+150°C  
-55...+150°C  
1
Please note the detailed information on our website or at the beginning of the data book  
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches  
2
3
TA = 25°C and per transistor, unless otherwise specified – TA = 25°C und pro Transistor, wenn nicht anders angegeben  
Mounted on P.C. board with 3 mm2 copper pad at each terminal  
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 
 
 

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