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BC858A/E9 PDF预览

BC858A/E9

更新时间: 2024-11-03 23:34:51
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
5页 218K
描述
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | SOT-23

BC858A/E9 数据手册

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BC856 thru BC859  
Vishay Semiconductors  
formerly General Semiconductor  
Small Signal Transistors (PNP)  
Mounting Pad Layout  
0.031 (0.8)  
TO-236AB (SOT-23)  
0.035 (0.9)  
.122 (3.1)  
.110 (2.8)  
0.079 (2.0)  
.016 (0.4)  
Top View  
3
Pin Configuration  
0.037 (0.95)  
1 = Base, 2 = Emitter,  
3 = Collector  
0.037 (0.95)  
Type  
Marking  
Type  
Marking  
1
2
BC856A  
B
3A  
3B  
BC858A  
3J  
3K  
3L  
Dimensions in inches  
and (millimeters)  
B
C
.037(0.95)  
.037(0.95)  
BC857A  
3E  
3F  
3G  
BC859A  
4A  
4B  
4C  
B
C
B
C
Features  
PNP Silicon Epitaxial Planar Transistors for switching  
.102 (2.6)  
.094 (2.4)  
.016 (0.4) .016 (0.4)  
and AF amplifier applications.  
Especially suited for automatic insertion in thick and  
thin-film circuits.  
Mechanical Data  
These transistors are subdivided into three groups  
(A, B, and C) according to their current gain. The type  
BC856 is available in groups A and B, however, the types  
BC857, BC558 and BC859 can be supplied in all three  
groups. The BC849 is a low noise type.  
Case: SOT-23 Plastic Package  
Weight: approx. 0.008g  
Packaging Codes/Options:  
E8/10K per 13reel (8mm tape), 30K/box  
E9/3K per 7reel (8mm tape), 30K/box  
As complementary types, the NPN transistors  
BC846...BC849 are recomended.  
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
BC856  
BC857  
BC858, BC859  
80  
50  
30  
Collector-Base Voltage  
V  
V
CBO  
CES  
BC856  
BC857  
BC858, BC859  
80  
50  
30  
Collector-Emitter Voltage (Base shorted)  
Collector-Emitter Voltage (Base open)  
V  
V
V
BC856  
BC857  
BC858, BC859  
65  
45  
30  
V  
V  
CEO  
Emitter-Base Voltage  
Collector Current  
5
100  
V
mA  
mA  
mA  
mA  
mW  
°C/W  
°C/W  
°C  
EBO  
I  
C
CM  
BM  
EM  
Peak Collector Current  
Peak Base Current  
Peak Emitter Current  
I  
I  
200  
200  
I
200  
Power Dissipation at T = 50°C  
P
310(1)  
450(1)  
320(1)  
150  
SB  
tot  
Thermal Resistance Junction to Ambient Air  
R
R
θJA  
Thermal Resistance Junction to Substrate Backside  
Junction Temperature  
θSB  
T
j
Storage Temperature Range  
T
S
65 to +150  
°C  
Note: (1) Device on fiberglass substrate, see layout on third page.  
Document Number 88169  
09-May-02  
www.vishay.com  
1

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