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BC857CT

更新时间： 2024-11-25 08:49:59
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管开关光电二极管
页数 文件大小 规格书
3页 278K
描述
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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中文翻译

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BC857CT 数据手册

 浏览型号BC857CT的Datasheet PDF文件第2页浏览型号BC857CT的Datasheet PDF文件第3页 
M C C  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
BC857AT, BT, CT  
Micro Commercial Components  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Features  
xꢀ Epitaxial Die Construction  
xꢀ For Switching and AF Amplifier Applications  
PNP SMALL SIGNAL  
SURFACE MOUNT  
TRANSISTOR  
•
Lead Free Finish/Rohs Compliant ("P"Suffix designates  
Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
·
·
Maximum Ratings @ 25O C Unless Otherwise Specified  
Unit  
V
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Rating  
-45  
SOT-523  
-50  
V
-6.0  
-100  
V
A
Collector Current-Continuous  
Power Dissipation  
mA  
D
Pd  
150  
mW  
к
C
TJ  
Operating Junction Temperature  
-55 to +150  
TSTG  
Storage Temperature  
-55 to +150  
к
C
B
Electrical Characteristics @ 25OC Unless Otherwise Specified  
E
B
Units  
Symbol  
Parameter  
Collector-Emitter Breakdown Voltage  
(IC=-10mA, IB=0)  
Min  
Typ  
Max  
V(BR)CEO  
E
-45  
---  
---  
V
V(BR)CBO  
V(BR)EBO  
Collector-Base Breakdown Voltage  
(IC=-10uA, IB=0)  
Collector-Emitter Breakdown Voltage  
(IE=-1uA, IC=0)  
-50  
-6  
---  
---  
---  
---  
V
H
V
G
J
ICBO  
hFE  
Collector Cutoff Current (  
V
CB = -30V)  
nA  
K
---  
---  
-15  
DC Current Gain Current Gain A  
125  
220  
420  
---  
---  
---  
250  
475  
800  
(VCE=-5.0V,IC=-2.0mA  
)
B
C
---  
INCHES  
MAX  
MM  
DIM  
A
B
C
D
E
G
H
J
K
MIN  
.059  
.030  
.057  
MIN  
MAX  
1.70  
0.85  
1.75  
NOTE  
VCE(SAT  
)
Collector-Emitter Saturation Voltage  
.067  
.033  
.069  
1.50  
0.75  
1.45  
(IC  
= -10mA, IB = -0.5mA)  
---  
---  
---  
---  
-300  
-650  
mV  
mV  
mV  
dB  
(
IC = -100mA, IB = -5.0 mA)  
.020 Nominal  
0.50Nominal  
0.90  
V
BE(SAT)  
Base-Emitter Saturation Voltage  
.035  
.043  
.004  
.031  
.008  
.014  
1.10  
(IC = -10mA, IB = -0.5mA)  
(IC = -100mA, IB = -5.0mA)  
.000  
.028  
.004  
.010  
.000  
.70  
.100  
0.80  
.200  
.35  
---  
---  
---  
---  
-700  
-900  
.100  
.25  
V
BE(ON)  
Base-Emitter Voltage  
(VCE = -5.0V, IC = -2.0mA)  
-600  
---  
---  
---  
-750  
-820  
(VCE = -5.0V, IC = -10mA)  
Noise  
Figure  
NF  
(IC = -0.2mA, VCE = -5.0V, RS =  
---  
---  
10  
2.0Kȍ, f = 1.0KHz, BW = 200Hz)  
Transition Frequency  
(VCE = -5.0V, IC = -10mA,f=100MHz)  
fT  
100  
---  
---  
---  
---  
MHz  
pF  
Output Capacitance  
VCB = -10V, f = 1.0MHz  
CoB  
4.5  
(
)
FE  
Classification OF h  
Rank  
AT  
BT  
3F  
CT  
3G  
Marking  
3E  
www.mccsemi.com  
Revision: A  
2011/01/01  
1 of 3  
123

中文翻译

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