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BC857CDW1T1 PDF预览

BC857CDW1T1

更新时间: 2024-02-15 23:54:44
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
6页 110K
描述
Dual General Purpose Transistors

BC857CDW1T1 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SC-88包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:8 weeks
风险等级:0.98Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:224492
Samacsys Pin Count:6Samacsys Part Category:Integrated Circuit
Samacsys Package Category:SOT23 (6-Pin)Samacsys Footprint Name:SC-88 SC70-6 SOT-363 CASE 719B-02 ISSUE W
Samacsys Released Date:2015-07-24 09:59:46Is Samacsys:N
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:45 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):420
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):0.38 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

BC857CDW1T1 数据手册

 浏览型号BC857CDW1T1的Datasheet PDF文件第2页浏览型号BC857CDW1T1的Datasheet PDF文件第3页浏览型号BC857CDW1T1的Datasheet PDF文件第4页浏览型号BC857CDW1T1的Datasheet PDF文件第5页浏览型号BC857CDW1T1的Datasheet PDF文件第6页 
BC856BDW1T1,  
BC857BDW1T1 Series,  
BC858BDW1T1 Series  
Preferred Devices  
Dual General Purpose  
Transistors  
http://onsemi.com  
PNP Duals  
These transistors are designed for general purpose amplifier  
applications. They are housed in the SOT−363/SC−88 which is  
designed for low power surface mount applications.  
(3)  
(2)  
(1)  
Q
Device Marking:  
Q
1
2
BC856BDW1T1 = 3B  
BC857BDW1T1 = 3F  
BC857CDW1T1 = 3G  
BC858BDW1T1 = 3K  
BC858CDW1T1 = 3L  
(4)  
(5)  
(6)  
DEVICE MARKING  
6
5
4
MAXIMUM RATINGS  
Rating  
Symbol BC856 BC857 BC858 Unit  
1
2
3xm  
See Table  
3
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
V
V
V
−65  
−80  
−45  
−50  
−30  
−30  
V
V
CEO  
CBO  
EBO  
SOT−363/SC−88  
CASE 419B  
Style 1  
−5.0  
−100  
−5.0  
−100  
−5.0  
−100  
V
Collector Current −  
Continuous  
I
C
mAdc  
3x = Specific Device Code  
THERMAL CHARACTERISTICS  
x
= B, F, G, K, L  
Characteristic  
Symbol  
Max  
Unit  
M = Date Code  
Total Device Dissipation  
Per Device  
FR5 Board (Note 1)  
P
D
380  
250  
mW  
ORDERING INFORMATION  
T = 25°C  
Derate Above 25°C  
A
Device  
Package  
SOT−363  
SOT−363  
SOT−363  
SOT−363  
SOT−363  
Shipping  
3.0  
mW/°C  
°C/W  
BC856BDW1T1  
BC857BDW1T1  
BC857CDW1T1  
BC858BDW1T1  
BC858CDW1T1  
3000 Units/Reel  
3000 Units/Reel  
3000 Units/Reel  
3000 Units/Reel  
3000 Units/Reel  
Thermal Resistance,  
Junction to Ambient  
R
328  
q
JA  
Junction and Storage  
Temperature Range  
T , T  
J
55 to +150  
°C  
stg  
1. FR−5 = 1.0 x 0.75 x 0.062 in  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
January, 2004 − Rev. 3  
BC856BDW1T1/D  
 

BC857CDW1T1 替代型号

型号 品牌 替代类型 描述 数据表
BC857CDW1T1G ONSEMI

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BC858CDW1T1G ONSEMI

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