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BC857CDW1T1G PDF预览

BC857CDW1T1G

更新时间: 2024-01-14 21:30:16
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管光电二极管放大器PC
页数 文件大小 规格书
6页 178K
描述
Dual General Purpose Transistors

BC857CDW1T1G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SC-88包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:8 weeks
风险等级:0.98Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:224492
Samacsys Pin Count:6Samacsys Part Category:Integrated Circuit
Samacsys Package Category:SOT23 (6-Pin)Samacsys Footprint Name:SC-88 SC70-6 SOT-363 CASE 719B-02 ISSUE W
Samacsys Released Date:2015-07-24 09:59:46Is Samacsys:N
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:45 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):420
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):0.38 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

BC857CDW1T1G 数据手册

 浏览型号BC857CDW1T1G的Datasheet PDF文件第2页浏览型号BC857CDW1T1G的Datasheet PDF文件第3页浏览型号BC857CDW1T1G的Datasheet PDF文件第4页浏览型号BC857CDW1T1G的Datasheet PDF文件第5页浏览型号BC857CDW1T1G的Datasheet PDF文件第6页 
BC856BDW1T1G,  
BC857BDW1T1G Series,  
BC858CDW1T1G Series  
Preferred Devices  
Dual General Purpose  
Transistors  
http://onsemi.com  
PNP Duals  
(3)  
(2)  
(1)  
Q
These transistors are designed for general purpose amplifier  
applications. They are housed in the SOT363/SC88 which is  
designed for low power surface mount applications.  
Q
1
2
Features  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
(4)  
(5)  
(6)  
Compliant  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
1
CollectorEmitter Voltage  
V
CEO  
V
CBO  
V
EBO  
V
BC856  
BC857  
BC858  
65  
45  
30  
SOT363/SC88  
CASE 419B  
STYLE 1  
CollectorBase Voltage  
V
BC856  
BC857  
BC858  
80  
50  
30  
MARKING DIAGRAM  
EmitterBase Voltage  
5.0  
V
Collector Current Continuous  
I
100  
mAdc  
C
3x M G  
G
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation Per Device  
P
380  
250  
mW  
D
3x = Specific Device Code  
x = B, F, G, or L  
FR5 Board (Note 1)  
T = 25°C  
A
Derate Above 25°C  
3.0  
mW/°C  
°C/W  
(See Ordering Information)  
= Date Code  
M
Thermal Resistance,  
R
q
328  
JA  
G
= PbFree Package  
(Note: Microdot may be in either location)  
JunctiontoAmbient  
Junction and Storage Temperature  
Range  
T , T  
55 to +150  
°C  
J
stg  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR5 = 1.0 x 0.75 x 0.062 in  
Preferred devices are recommended choices for future use  
and best overall value.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
October, 2009 Rev. 7  
BC856BDW1T1/D  
 

BC857CDW1T1G 替代型号

型号 品牌 替代类型 描述 数据表
BC857CDW1T1 ONSEMI

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