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BC857CMTF

更新时间: 2024-11-21 12:54:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管开关光电二极管
页数 文件大小 规格书
5页 150K
描述
PNP Epitaxial Silicon Transistor

BC857CMTF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):420JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

BC857CMTF 数据手册

 浏览型号BC857CMTF的Datasheet PDF文件第2页浏览型号BC857CMTF的Datasheet PDF文件第3页浏览型号BC857CMTF的Datasheet PDF文件第4页浏览型号BC857CMTF的Datasheet PDF文件第5页 
August 2006  
BC856- BC860  
PNP Epitaxial Silicon Transistor  
tm  
Features  
Switching and Amplifier Applications  
Suitable for automatic insertion in thick and thin-film circuits  
Low Noise: BC859, BC860  
3
Complement to BC846 ... BC850  
2
SOT-23  
1
1. Base 2. Emitter 3. Collector  
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCBO  
Collector-Base Voltage  
: BC856  
: BC857/860  
: BC858/859  
-80  
-50  
-30  
V
V
V
VCEO  
Collector-Emitter Voltage  
: BC856  
: BC857/860  
: BC858/859  
-65  
-45  
-30  
V
V
V
VEBO  
IC  
Emitter-Base Voltage  
Collector Current (DC)  
-5  
-100  
V
mA  
mW  
°C  
PC  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
310  
TJ  
150  
TSTG  
-65 ~ 150  
°C  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Electrical Characteristics* Ta=25°C unless otherwise noted  
Symbol  
Parameter  
Collector Cut-off Current  
DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
-15  
Units  
ICBO  
VCB= -30V, IE=0  
nA  
hFE  
VCE= -5V, IC= -2mA  
110  
800  
VCE (sat)  
Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA  
IC= -100mA, IB= -5mA  
-90  
-250  
-300  
-650  
mV  
mV  
VBE (sat)  
VBE (on)  
fT  
Base-Emitter Saturation Voltage  
IC= -10mA, IB= -0.5mA  
IC= -100mA, IB= -5mA  
-700  
-900  
mV  
mV  
Base-Emitter On Voltage  
VCE= -5V, IC= -2mA  
VCE= -5V, IC= -10mA  
-600  
-660  
-750  
-800  
mV  
mV  
Current Gain Bandwidth Product  
Output Capacitance  
VCE= -5V, IC= -10mA  
f=100MHz  
150  
MHz  
Cob  
NF  
VCB= -10V, IE=0, f=1MHz  
6
pF  
Noise Figure  
: BC856/857/858  
: BC859/860  
VCE= -5V, IC= -200µA  
RG=2KΩ, f=1KHz  
2
1
10  
4
dB  
dB  
: BC859  
: BC860  
VCE= -5V, IC= -200µA  
RG=2K, f=30~15000Hz  
1.2  
1.2  
4
2
dB  
dB  
* Pulse Test: Pulse Width300µs, Duty Cycle2%  
©2006 Fairchild Semiconductor Corporation  
BC856- BC860 Rev. B  
1
www.fairchildsemi.com  

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