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BC857,215 PDF预览

BC857,215

更新时间: 2024-02-02 17:14:08
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
10页 89K
描述
BC856; BC857; BC858 - PNP general purpose transistors TO-236 3-Pin

BC857,215 技术参数

生命周期:Active零件包装代码:TO-236
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95Factory Lead Time:4 weeks
风险等级:0.66Samacsys Description:BC856; BC857; BC858 - PNP general purpose transistors
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):125
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzVCEsat-Max:0.65 V

BC857,215 数据手册

 浏览型号BC857,215的Datasheet PDF文件第2页浏览型号BC857,215的Datasheet PDF文件第3页浏览型号BC857,215的Datasheet PDF文件第4页浏览型号BC857,215的Datasheet PDF文件第6页浏览型号BC857,215的Datasheet PDF文件第7页浏览型号BC857,215的Datasheet PDF文件第8页 
NXP Semiconductors  
Product data sheet  
PNP general purpose transistors  
BC856; BC857; BC858  
MGT711  
MGT712  
500  
1200  
BE  
(mV)  
handbook, halfpage  
handbook, halfpage  
V
h
FE  
1000  
400  
(1)  
(2)  
(1)  
800  
600  
400  
200  
0
300  
(2)  
200  
(3)  
(3)  
100  
0
10  
2  
1  
2
3
2  
1  
2
3
10  
10  
1  
10  
10  
10  
(mA)  
10  
1  
10  
10  
10  
(mA)  
I
I
C
C
BC857A; VCE = 5 V.  
(1) Tamb = 150 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 55 °C.  
BC857A; VCE = 5 V.  
(1) Tamb = 55 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 150 °C.  
Fig.2 DC current gain as a function of collector  
current; typical values.  
Fig.3 Base-emitter voltage as a function of  
collector current; typical values.  
MGT713  
MGT714  
4
10  
1200  
BEsat  
handbook, halfpage  
handbook, halfpage  
V
(mV)  
V
CEsat  
1000  
(mV)  
(1)  
(2)  
3
10  
800  
(3)  
600  
2
400  
200  
0
10  
(1)  
(3) (2)  
10  
1  
2
3
1  
2
3
10  
1  
10  
10  
10  
(mA)  
10  
1  
10  
10  
10  
(mA)  
I
I
C
C
BC857A; IC/IB = 20.  
(1) Tamb = 150 °C.  
BC857A; IC/IB = 20.  
(1) Tamb = 55 °C.  
(2)  
T
amb = 25 °C.  
(2)  
Tamb = 25 °C.  
(3) Tamb = 55 °C.  
(3) Tamb = 150 °C.  
Fig.4 Collector-emitter saturation voltage as a  
function of collector current; typical values.  
Fig.5 Base-emitter saturation voltage as a  
function of collector current; typical values.  
2004 Jan 16  
5

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