TM
BC856 SERIES
BC857 SERIES
BC858 SERIES
Central
Semiconductor Corp.
DESCRIPTION:
SURFACE MOUNT
The CENTRAL SEMICONDUCTOR BC856,
BC857 and BC858 Series types are PNP Silicon
Transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for general purpose switching
and amplifier applications.
PNP SILICON TRANSISTOR
MARKING CODE: PLEASE SEE MARKING
CODE TABLE ON FOLLOWING PAGE
Note: Reverse Lead Codes Available, Add “R” to
the end of the Part # and Marking Code.
SOT-23 CASE
MAXIMUM RATINGS (T =25°C)
A
SYMBOL
BC858
30
30
BC857
50
BC856
80
65
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
V
V
V
CBO
CEO
EBO
45
5.0
V
I
100
200
200
350
C
mA
Peak Collector Current
Peak Base Current
I
CM
mA
I
mA
BM
Power Dissipation
P
mW
D
Operating and Storage
Junction Temperature
Thermal Resistance
T ,T
J stg
-65 to +150
357
°C
°C/W
Θ
JA
ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
15
UNITS
nA
µA
nA
V
I
I
I
V
V
V
= 30V
CBO
CBO
EBO
CB
CB
EB
= 30V, T =150°C
A
4.0
=5.0V
I =10µA (BC858)
100
BV
BV
BV
BV
BV
BV
BV
30
50
80
30
45
65
5.0
CBO
CBO
C
I =10µA (BC857)
V
C
I =10µA (BC856)
V
CBO
C
I =10mA (BC858)
V
CEO
C
I =10mA (BC857)
V
CEO
C
I =10mA (BC856)
V
CEO
C
I =10µA
V
EBO
E
V
V
V
V
I =10mA, I =0.5mA
0.3
V
CE(SAT)
CE(SAT)
BE(ON)
BE(ON)
C
B
B
I =100mA, I =5.0mA
0.65
0.75
0.82
V
C
I =2.0mA, V =5.0V
CE
0.6
V
C
I =10mA, V =5.0V
V
C
CE
C
f
V
=5.0V, I =10mA, f=100MHz
=5.0V, I =200µA,
C
100
MHz
T
CE
CE
NF
V
R =2KΩ, f= 1KHz, BW=200Hz
10
dB
S
BC856A
BC857A
BC858A
BC856B
BC857B
BC858B
BC857C
BC858C
MIN
125
MAX
250
MIN
220
MAX
475
MIN
420
MAX
h
V
=5.0V, I =2.0mA
800
FE
CE
C
R1 (10-September 2004)