BC856A

更新时间： 2024-09-25 06:41:39

品牌	Logo	应用领域
RECTRON		晶体晶体管
页数	文件大小	规格书
2页	452K
描述
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)

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中文翻译

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数据手册

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BC856A 数据手册

BC856B

SOT-23 BIPOLAR TRANSISTORS

TRANSISTOR(PNP)

FEATURES

* Power dissipation

PCM :

0.225

W (Tamb=25^OC) Note1

Collector current

ICM :

Collector-base voltage

-0.1

-80

(BR)CBO

SOT-23

Operating and storage junction temperature range

T ,Tstg: -55^OC to +150^OC

COLLECTOR

0.055(1.40)

0.047(1.20)

BASE

MECHANICAL DATA

* Case: Molded plastic

EMITTER

* Epoxy: UL 94V-O rate flame retardant

* Lead: MIL-STD-202E method 208C guaranteed

* Mounting position: Any

0.006(0.15)

0.003(0.08)

0.043(1.10)

0.035(0.90)

0.020(0.50)

0.012(0.30)

0.004(0.10)

0.000(0.00)

* Weight: 0.008 gram

0.100(2.55)

0.089(2.25)

0.020(0.50)

0.012(0.30)

0.019(2.00)

0.071(1.80)

0.118(3.00)

0.110(2.80)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25^OC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Dimensions in inches and (millimeters)

ELECTRICAL CHARACTERISTICS ( @ TA = 25^oC unless otherwise noted )

CHARACTERISTICS

Collector-base breakdown voltage (I = -10µA, I =0)

SYMBOL

MIN

-80

MAX

UNITS

(BR)CBO

-65

Collector-emitter breakdown voltage (I = -10mA, I =0)

(BR)CEO

-5

Emitter-base breakdown voltage (I = -10µA, I =0)

(BR)EBO

-0.1

µA

Collector cut-off current (V = -70V, I =0)

CBO

-0.1

µA

Collector cut-off current (V = -60V, I =0)

CEO

Emitter cut-off current (V = -5V, I =0)

EBO

220

475

-0.5

DC current gain (V = -5V, I = -2mA)

FE(1)

Collector-emitter saturation voltage (I = -100mA, I = -5mA)

CE(sat)

-1.1

Base-emitter saturation voltage (I = -100mA, I = -10mA)

BE(sat)

100

MHZ

Transition frequency (V = -5V, I = -10mA, f= 100MHZ)

DEVICE MARKING

BC856B

Notes: 1. Transistor mounted on an FR4 Printed-circuit board.

2. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.

2007-3

中文翻译

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