BC848CLT1G

更新时间： 2025-08-06 21:54:35

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管光电二极管
页数	文件大小	规格书
6页	96K
描述
General Purpose Transistors(NPN Silicon)

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替代型号

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BC848CLT1G 数据手册

BC846ALT1 Series

BC846, BC847 and BC848 are Preferred Devices

General Purpose

Transistors

NPN Silicon

Features

http://onsemi.com

• Pb−Free Packages are Available

• Moisture Sensitivity Level: 1

COLLECTOR

• ESD Rating − Human Body Model: >4000 V

ESD Rating − Machine Model: >400 V

BASE

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

EMITTER

Collector-Emitter Voltage

CEO

CBO

EBO

Vdc

BC846

BC847, BC850

BC848, BC849

Collector−Base Voltage

Vdc

BC846

BC847, BC850

BC848, BC849

Emitter−Base Voltage

SOT−23

BC846

BC847, BC850

BC848, BC849

6.0

5.0

CASE 318

STYLE 6

Collector Current − Continuous

100

mAdc

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

MARKING DIAGRAM

xxD

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board,

(Note 1)

225

= Specific Device Code

= Date Code

T = 25°C

Derate above 25°C

1.8

mW/°C

°C/W

Thermal Resistance,

556

ORDERING INFORMATION

See detailed ordering and shipping information in the package

Junction−to−Ambient (Note 1)

dimensions section on page 5 of this data sheet.

Total Device Dissipation

300

Alumina Substrate (Note 2)

T = 25°C

Preferred devices are recommended choices for future use

Derate above 25°C

2.4

mW/°C

°C/W

and best overall value.

Thermal Resistance,

417

Junction−to−Ambient (Note 2)

Junction and Storage

Temperature Range

T , T

−55 to

+150

°C

stg

1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in 99.5% alumina.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

June, 2004 − Rev. 6

BC846ALT1/D

12 3 4 5 6

中文翻译

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BC848CLT1G 替代型号

型号	品牌	替代类型	描述	数据表
BC849CLT1G	ONSEMI	类似代替	General Purpose Transistors(NPN Silicon)
BC848ALT1G	ONSEMI	类似代替	General Purpose Transistors(NPN Silicon)
BC848BLT1G	ONSEMI	类似代替	General Purpose Transistors

与BC848CLT1G相关器件

型号	品牌	获取价格	描述	数据表
BC848CLT3	ONSEMI	获取价格	100mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN
BC848CLT3	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236A
BC848CLT3G	ONSEMI	获取价格	General Purpose Transistors
BC848CM	BL Galaxy Electrical	获取价格	30V,0.1A,General Purpose NPN Bipolar Transistor
BC848CM3	MCC	获取价格	Tape&Reel: 8Kpcs/Reel,;
BC848CM3	YANGJIE	获取价格	SOT-723
BC848CMTF	FAIRCHILD	获取价格	NPN Epitaxial Silicon Transistor
BC848CMTF	ONSEMI	获取价格	NPN Epitaxial Silicon Transistor
BC848CMTF_11	FAIRCHILD	获取价格	NPN Epitaxial Silicon Transistor
BC848CPDW	AITSEMI	获取价格	IC (mA) : 100; VCEO (V) : 30; hFE Min/Max : 420/800; hFE/ IC(mA)/VCE(Volts) : 2/5; VCE(sat

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