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BC848CMTF PDF预览

BC848CMTF

更新时间: 2024-01-04 09:20:44
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
5页 159K
描述
NPN Epitaxial Silicon Transistor

BC848CMTF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
风险等级:5.56Is Samacsys:N
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):110
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

BC848CMTF 数据手册

 浏览型号BC848CMTF的Datasheet PDF文件第2页浏览型号BC848CMTF的Datasheet PDF文件第3页浏览型号BC848CMTF的Datasheet PDF文件第4页浏览型号BC848CMTF的Datasheet PDF文件第5页 
August 2006  
BC846- BC850  
NPN Epitaxial Silicon Transistor  
tm  
Features  
Switching and Amplifier Applications  
Suitable for automatic insertion in thick and thin-film circuits  
Low Noise: BC849, BC850  
3
Complement to BC856 ... BC860  
2
SOT-23  
1
1. Base 2. Emitter 3. Collector  
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCBO  
Collector-Base Voltage  
: BC846  
: BC847/850  
: BC848/849  
80  
50  
30  
V
V
V
VCEO  
Collector-Emitter Voltage : BC846  
: BC847/850  
65  
45  
30  
V
V
V
: BC848/849  
VEBO  
Emitter-Base Voltage  
: BC846/847  
: BC848/849/850  
6
5
V
V
IC  
Collector Current (DC)  
100  
310  
mA  
mW  
°C  
PC  
TJ  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
150  
TSTG  
-65 ~ 150  
°C  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Electrical Characteristics* Ta=25°C unless otherwise noted  
Symbol  
Parameter  
Collector Cut-off Current  
DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
15  
Units  
ICBO  
VCB=30V, IE=0  
nA  
hFE  
VCE=5V, IC=2mA  
110  
800  
VCE (sat)  
Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA  
IC=100mA, IB=5mA  
90  
200  
250  
600  
mV  
mV  
VBE (sat)  
VBE (on)  
fT  
Collector-Base Saturation Voltage  
IC=10mA, IB=0.5mA  
IC=100mA, IB=5mA  
700  
900  
mV  
mV  
Base-Emitter On Voltage  
VCE=5V, IC=2mA  
VCE=5V, IC=10mA  
580  
660  
700  
720  
mV  
mV  
Current Gain Bandwidth Product  
VCE=5V, IC=10mA,  
f=100MHz  
300  
MHz  
Cob  
Cib  
NF  
Output Capacitance  
Input Capacitance  
VCB=10V, IE=0, f=1MHz  
VEB=0.5V, IC=0, f=1MHz  
3.5  
9
6
pF  
pF  
Noise Figure  
: BC846/847/848  
: BC849/850  
VCE= 5V, IC= 200µA  
RG=2KΩ, f=1KHz  
2
1.2  
10  
4
dB  
dB  
: BC849  
: BC850  
VCE= 5V, IC= 200µA  
RG=2K, f=30~15000Hz  
1.4  
1.4  
4
3
dB  
dB  
* Pulse Test: Pulse Width300µs, Duty Cycle2%  
©2006 Fairchild Semiconductor Corporation  
BC846- BC850 Rev. B  
1
www.fairchildsemi.com  

BC848CMTF 替代型号

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