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BC847CMB PDF预览

BC847CMB

更新时间: 2024-11-22 11:11:15
品牌 Logo 应用领域
安世 - NEXPERIA 开关晶体管
页数 文件大小 规格书
14页 1002K
描述
45 V, 100 mA NPN general-purpose transistorsProduction

BC847CMB 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:CHIP CARRIER, R-PBCC-N3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.51
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):420
JESD-30 代码:R-PBCC-N3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:CHIP CARRIER极性/信道类型:NPN
参考标准:AEC-Q101; IEC-60134表面贴装:YES
端子面层:Tin (Sn)端子形式:NO LEAD
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

BC847CMB 数据手册

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BC847xMB series  
45 V, 100 mA NPN general-purpose transistors  
Rev. 1 — 5 March 2012  
Product data sheet  
1. Product profile  
1.1 General description  
NPN general-purpose transistors in a leadless ultra small SOT883B  
Surface-Mounted Device (SMD) plastic package.  
Table 1.  
Product overview  
Type number  
Package  
Nexperia  
SOT883B  
SOT883B  
SOT883B  
PNP complement  
JEITA  
JEDEC  
BC847AMB  
BC847BMB  
BC847CMB  
-
-
-
-
-
-
BC857AMB  
BC857BMB  
BC857CMB  
1.2 Features and benefits  
Leadless ultra small SMD plastic  
Power dissipation comparable to SOT23  
AEC-Q101 qualified  
package  
Low package height of 0.37 mm  
1.3 Applications  
General-purpose switching and amplification  
Mobile applications  
1.4 Quick reference data  
Table 2.  
Symbol  
VCEO  
IC  
Quick reference data  
Parameter  
Conditions  
Min Typ Max Unit  
collector-emitter voltage  
collector current  
DC current gain  
BC847AMB  
open base  
-
-
-
-
45  
V
100 mA  
hFE  
VCE = 5 V; IC = 2 mA  
110  
200  
420  
-
-
-
220  
450  
800  
BC847BMB  
BC847CMB  

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