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BC847CMTF_NL PDF预览

BC847CMTF_NL

更新时间: 2024-09-20 13:05:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
3页 71K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FREE PACKAGE-3

BC847CMTF_NL 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.54最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):420JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
Base Number Matches:1

BC847CMTF_NL 数据手册

 浏览型号BC847CMTF_NL的Datasheet PDF文件第2页浏览型号BC847CMTF_NL的Datasheet PDF文件第3页 
NPN EPITAXIAL  
BC846/847/848/849/850  
SILICON TRANSISTOR  
SWITCHING AND AMPLIFIER APPLICATIONS  
· Suitable for automatic insertion in thick and thin-film circuits  
· LOW NOISE: BC849, BC850  
SOT-23  
· Complement to BC856 ... BC860  
ABSOLUTE MAXIMUM RATINGS (TA=25°C)  
Characteristic  
Symbol  
VCBO  
Rating  
Unit  
Collector Base Voltage  
: BC846  
80  
50  
30  
V
V
V
: BC847/850  
: BC848/849  
Collector Emitter Voltage  
: BC846  
VCEO  
65  
45  
30  
V
V
V
: BC847/850  
: BC848/849  
Emitter-Base Voltage  
: BC846/847  
VEBO  
6
5
V
V
: BC848/849/850  
Collector Current (DC)  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
IC  
PC  
TJ  
mA  
mW  
°C  
100  
310  
150  
-65 ~ 150  
TSTG  
°C  
1. Base 2. Emitter 3. Collector  
ELECTRICAL CHARACTERISTICS (TA=25°C)  
Characteristic  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
ICBO  
hFE  
VCE (sat)  
VCB=30V, IE=0  
nA  
Collector Cut-off Current  
DC Current Gain  
Collector Emitter Saturation Voltage  
15  
800  
250  
600  
VCE=5V, IC=2mA  
IC=10mA, IB=0.5mA  
IC=100mA, IB=5mA  
IC=10mA, IB=0.5mA  
IC=100mA, IB=5mA  
VCE=5V, IC=2mA  
VCE=5V, IC=10mA  
VCE=5V, IC=10mA  
f=100MHz  
110  
mV  
mV  
mV  
mV  
mV  
mV  
MHz  
90  
200  
700  
900  
660  
VBE (sat)  
VBE (on)  
fT  
Collector Base Saturation Voltage  
Base Emitter On Voltage  
580  
700  
720  
Current Gain Bandwidth Product  
300  
CCBO  
CEBO  
NF  
VCB=10V, f=1MHz  
VEB=0.5V, f=1MHz  
VCE=5V, IC=200mA  
f=1KHz, RG=2KW  
VCE=5V, IC=200mA  
RG=2KW  
Collector Base Capacitance  
Emitter Base Capacitance  
6
pF  
pF  
dB  
dB  
dB  
dB  
3.5  
9
2
1.2  
1.4  
1.4  
Noise Figure  
: BC846/847/848  
10  
4
4
: BC849/850  
: BC849  
NF  
3
: BC850  
f=30~15000Hz  
hFE CLASSIFICATION  
Classification  
A
B
C
hFE  
110-220  
200-450  
420-800  
MARKING CODE  
TYPE 846A 846B 846C 847A 847B 847C 848A 848B 848C 849A 849B 849C 850A 850B 850C  
MARK 8AA  
8AB  
8AC  
8BA  
8BB  
8BC  
8CA  
8CB  
8CC  
8DA  
8DB 8DC  
8EA  
8EB  
8EC  
Rev. B  
ã
1999 Fairchild Semiconductor Corporation  

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