BC847BW/DG

更新时间： 2024-02-19 18:20:29

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
15页	97K
描述
45 V, 100 mA NPN general-purpose transistors

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中文翻译

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技术参数
数据手册

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BC847BW/DG 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84
JESD-609代码：	e3	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

BC847BW/DG 数据手册

BC847/BC547 series

NXP Semiconductors

45 V, 100 mA NPN general-purpose transistors

mgt723

mgt724

400

1200

(mV)

1000

(1)

300

(1)

(2)

800

600

400

200

(2)

(3)

200

100

(3)

−1

(mA)

I (mA)

V_CE= 5 V

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 150 °C

Fig 1. Selection A: DC current gain as a function of

collector current; typical values

Fig 2. Selection A: Base-emitter voltage as a

function of collector current; typical values

mgt725

mgt726

1200

BEsat

(mV)

1000

(mV)

CEsat

(1)

(2)

800

600

400

200

(1)

(2)

(3)

−1

(mA)

I (mA)

I_C/I_B= 20

I_C/I_B= 10

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 150 °C

Fig 3. Selection A: Collector-emitter saturation

voltage as a function of collector current;

typical values

Fig 4. Selection A: Base-emitter saturation voltage

as a function of collector current; typical

values

BC847_BC547_SER_7

Product data sheet

Rev. 07 — 10 December 2008

7 of 15

1...4 5 678 9 10...15

中文翻译

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