5秒后页面跳转
BC847B PDF预览

BC847B

更新时间: 2024-01-28 18:31:07
品牌 Logo 应用领域
RECTRON 晶体晶体管光电二极管IOT
页数 文件大小 规格书
2页 452K
描述
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN)

BC847B 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.84
JESD-609代码:e3端子面层:Matte Tin (Sn)
Base Number Matches:1

BC847B 数据手册

 浏览型号BC847B的Datasheet PDF文件第2页 
BC847B  
SOT-23 BIPOLAR TRANSISTORS  
TRANSISTOR(NPN)  
FEATURES  
* Power dissipation  
PCM :  
0.225  
W (Tamb=25OC) Note1  
Collector current  
ICM :  
Collector-base voltage  
*
*
*
0.1  
50  
A
V
:
V
CBO  
SOT-23  
Operating and storage junction temperature range  
T ,Tstg: -55OC to +150OC  
J
COLLECTOR  
3
0.055(1.40)  
0.047(1.20)  
BASE  
MECHANICAL DATA  
* Case: Molded plastic  
1
2
EMITTER  
* Epoxy: UL 94V-O rate flame retardant  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
0.006(0.15)  
0.003(0.08)  
0.043(1.10)  
0.035(0.90)  
0.020(0.50)  
0.012(0.30)  
0.004(0.10)  
0.000(0.00)  
* Weight: 0.008 gram  
0.100(2.55)  
0.089(2.25)  
0.020(0.50)  
0.012(0.30)  
1
2
0.019(2.00)  
0.071(1.80)  
0.118(3.00)  
0.110(2.80)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25OC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
3
Dimensions in inches and (millimeters)  
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )  
CHARACTERISTICS  
SYMBOL  
MIN  
50  
45  
6
MAX  
-
UNITS  
V
CBO  
Collector - base breakdown voltage (I = 10µA, I =0)  
V
V
V
C
E
-
-
Collector - emitter breakdown voltage (I = 10mA, I =0)  
C
B
V
V
CEO  
Emitter - base breakdown voltage (I = 10µA, I =0)  
EBO  
E
C
Collector cut - off current (V = 50V, I =0)  
I
-
0.1  
µA  
µA  
µA  
-
CB  
E
CBO  
Collector cut - off current (V = 45V, I =0)  
I
-
0.1  
0.1  
450  
0.5  
CE  
B
CEO  
Emitter cut - off current (V = 5V, I =0)  
I
-
200  
-
EB  
C
EBO  
DC current gain (V = 5V, I = 2mA)  
h
CE  
C
FE(1)  
Collector - emitter saturation voltage (I = 100mA, I = 5mA)  
V
V
C
B
CE(sat)  
BE(sat)  
Base - emitter saturation voltage (I = 100mA, I = 5mA)  
V
-
1.1  
-
V
C
B
Transition frequency (V = 5V, I = 10mA, f= 100MHZ)  
100  
MHZ  
f
T
CE  
C
DEVICE MARKING  
BC847B  
1F  
2007-3  
Notes: 1. Transistor mounted on an FR4 Printed-circuit board.  
2. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.  

与BC847B相关器件

型号 品牌 获取价格 描述 数据表
BC847B(SOT-23) UTC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), NPN
BC847B,215 ETC

获取价格

TRANS NPN 45V 0.1A SOT23
BC847B,235 ETC

获取价格

TRANS NPN 45V 0.1A SOT23
BC847B.215 NXP

获取价格

45 V, 100 mA NPN general-purpose transistors
BC847B.235 NXP

获取价格

45 V, 100 mA NPN general-purpose transistors
BC847B/DG NXP

获取价格

45 V, 100 mA NPN general-purpose transistors
BC847B/DG,215 NXP

获取价格

45 V, 100 mA NPN general-purpose transistors; Package: SOT23 (TO-236AB); Container: Tape r
BC847B/DG/B3,215 ETC

获取价格

TRANS GEN PURPOSE TO-236AB
BC847B/E8 ETC

获取价格

TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 100MA I(C) | SOT-23
BC847B/E9 VISHAY

获取价格

Transistor