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BC847AT-7-F PDF预览

BC847AT-7-F

更新时间: 2024-11-25 08:49:47
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美台 - DIODES 晶体晶体管
页数 文件大小 规格书
3页 159K
描述
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

BC847AT-7-F 数据手册

 浏览型号BC847AT-7-F的Datasheet PDF文件第2页浏览型号BC847AT-7-F的Datasheet PDF文件第3页 
BC847AT, BT, CT  
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Features  
Epitaxial Die Construction  
Complementary PNP Types Available  
(BC857AT,BT,CT)  
Ultra-Small Surface Mount Package  
Lead Free/RoHS Compliant (Note 2)  
"Green" Device (Note 4 and 5)  
A
SOT-523  
Dim Min Max Typ  
C
A
B
C
D
G
H
J
0.15 0.30 0.22  
0.75 0.85 0.80  
1.45 1.75 1.60  
C
B
TOP VIEW  
0.50  
E
B
Mechanical Data  
0.90 1.10 1.00  
1.50 1.70 1.60  
0.00 0.10 0.05  
0.60 0.80 0.75  
0.10 0.30 0.22  
0.10 0.20 0.12  
0.45 0.65 0.50  
G
H
Case: SOT-523  
Case Material - Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Solderable per MIL-STD-202, Method 208  
Lead Free Plating (Matte Tin Finish annealed over  
Alloy 42 leadframe).  
Terminal Connections: See Diagram  
Marking Code: See Table  
Ordering Information: See Page 2  
Marking Information: See Page 2  
Weight: 0.002 grams (approximate)  
K
J
K
L
M
N
M
N
α
L
D
Type  
Marking  
1E  
1F  
1M  
0°  
8°  
BC847AT  
BC847BT  
BC847CT  
All Dimensions in mm  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
50  
Unit  
V
45  
V
Collector-Emitter Voltage  
6.0  
V
Emitter-Base Voltage  
Collector Current  
Power Dissipation (Note 1)  
Thermal Resistance, Junction to Ambient (Note 1)  
100  
150  
833  
mA  
mW  
°C/W  
Pd  
Rθ  
JA  
Operating and Storage Temperature Range  
-55 to +150  
°C  
Tj, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
(Note 3)  
Symbol  
Min  
110  
200  
420  
Typ  
290  
520  
Max  
220  
450  
800  
Unit  
Test Condition  
DC Current Gain  
Current Gain A  
B
C
hFE  
VCE = 5.0V, IC = 2.0mA  
IC = 10mA, IB = 0.5mA  
IC = 100mA, IB = 5.0mA  
IC = 10mA, IB = 0.5mA  
IC = 100mA, IB = 5.0mA  
VCE = 5.0V, IC = 2.0mA  
VCE =5.0V, IC = 10mA  
VCB = 30V  
250  
600  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter Voltage  
(Note 3)  
(Note 3)  
(Note 3)  
(Note 3)  
mV  
mV  
mV  
VCE(SAT)  
VBE(SAT)  
VBE  
700  
900  
580  
660  
700  
770  
ICBO  
ICBO  
15  
5.0  
nA  
µA  
Collector-Emitter Cutoff Current  
VCB = 30V, TA = 150°C  
VCE = 5.0V, IC = 10mA,  
f = 100MHz  
VCB = 10V, f = 1.0MHz  
VCE = 5V, RS = 2.0kΩ,  
f = 1.0kHz, BW = 200Hz  
Gain Bandwidth Product  
Output Capacitance  
100  
MHz  
pF  
fT  
4.5  
COBO  
NF  
BC847BT  
BC847CT  
10  
4.0  
dB  
Noise Figure  
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which  
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead.  
3. Short duration pulse test used to minimize self-heating effect.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
BC847AT, BT, CT  
© Diodes Incorporated  
DS30274 Rev. 9 - 2  
1 of 3  
www.diodes.com  

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