Datasheet > BC847AT

BC847AT

更新时间： 2024-02-28 01:36:40

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
3页	141K
描述
NPN Plastic Encapsulate Transistor

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中文翻译

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技术参数
数据手册

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BC847AT 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84
JESD-609代码：	e3	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

BC847AT 数据手册

BC847AT /BC847BT /BC847CT

NPN Plastic Encapsulate Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES



Ideally suited for automatic insertion

For Switching and AF Amplifier Applications

SOT-523



Base

Emitter

Collector

MARKING

Product

Marking Code

Top View

C B

BC847AT

BC847BT

BC847CT

Millimeter

REF.

Min.

Max.

Min.

Max.

1.5

1.45

0.75

0.7

0.9

0.15

1.7

0.1

PACKAGE INFORMATION

1.75

0.85

0.9

1.1

0.25

0.55 REF.

0.1

0.2

Package

MPQ

LeaderSize

0.5 TYP.

0.25 0.325

SOT-523

7’ inch

Collector





Base



Emitter

ABSOLUTE MAXIMUM RATINGS ( T_A= 25°C unless otherwise noted )

Parameter

Symbol

V_CBO

Ratings

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

V_CEO

V_EBO

0.1

Collector Current - Continuous

Collector Power Dissipation

Junction, Storage Temperature

I_C

P_C

150

℃

T_J, T_STG

150, -55 ~ 150

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

06-Jan-2011 Rev. A

Page 1 of 3

12 3

中文翻译

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BC847AT-13	DIODES	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, ULTRA S