BC846

更新时间： 2024-11-25 08:49:43

品牌	Logo	应用领域
可天士 - KODENSHI		晶体晶体管开关光电二极管
页数	文件大小	规格书
4页	262K
描述
General purpose application

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中文翻译

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数据手册

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BC846 数据手册

BC846

NPN Silicon Transistor

Descriptions

PIN Connection

• General purpose application

• Switching application

Features

• High voltage : V_CEO=55V

• Complementary pair with BC856

SOT-23

Ordering Information

Type NO.

Marking

Package Code

QA □ □

BC846

SOT-23

①

②

③

① Device Code ② hFE Rank ③ Year&Week Code

Absolute maximum ratings

Characteristic

(Ta=25°C)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector-Base voltage

Collector-Emitter voltage

Emitter-base voltage

Collector current

100

°C

Collector dissipation

Junction temperature

Storage temperature

P_C

200

T_j

150

T_stg

-55~150

°C

Electrical Characteristics

Characteristic

(Ta=25°C)

Symbol

BV_CEO

Test Condition

Min. Typ. Max. Unit

Collector-Emitter breakdown voltage

Base-Emitter turn on voltage

Base-Emitter saturation voltage

Collector-Emitter saturation voltage

Collector cut-off current

I_C=1mA, I_B=0

V_BE(ON)

V_BE(sat)

V_CE(sat)

I_CBO

V_CE=5V, I_C=2mA

I_C=100mA, I_B=5mA

V_CB=35V, I_E=0

550

700

900

600

800

110

DC current gain

V_CE=5V, I_C=2mA

V_CE=5V, I_C=10mA

V_CB=10V, I_E=0, f=1MHz

h_FE

Transition frequency

f_T

150

MHz

Collector output capacitance

C_ob

4.5

V_CE=5V, I_C=200μA,

f=1KHz, Rg=2KΩ

Noise figure

* : h_FErank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800

KSD-T5C027-000

12 3 4

中文翻译

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