Datasheet > BC81716LT1

BC81716LT1

更新时间： 2024-09-30 22:48:15

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
4页	93K
描述
CASE 318-08, STYLE 6 SOT-23 (TO-236AB)

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BC81716LT1 数据手册

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by BC817–16LT1/D

SEMICONDUCTOR TECHNICAL DATA

NPN Silicon

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Symbol

Value

Unit

CEO

CBO

EBO

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

Emitter–Base Voltage

5.0

500

Collector Current — Continuous

THERMAL CHARACTERISTICS

Characteristic

mAdc

Symbol

Max

Unit

Total Device Dissipation FR–5 Board, (1)

= 25°C

225

1.8

mW/°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

556

°C/W

Alumina Substrate, (2) T = 25°C

300

2.4

mW/°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

DEVICE MARKING

417

°C/W

°C

T , T

J stg

–55 to +150

BC817–16LT1 = 6A; BC817–25LT1 = 6B; BC817–40LT1 = 6C

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Typ

Max

Unit

Collector–Emitter Breakdown Voltage

(I = –10 mA)

—

(BR)CEO

Collector–Emitter Breakdown Voltage

(BR)CES

(BR)EBO

= 0, I = –10 µA)

Emitter–Base Breakdown Voltage

(I = –1.0 A)

5.0

Collector Cutoff Current

CBO

= 20 V)

= 20 V, T = 150°C)

—

100

5.0

µA

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Thermal Clad is a registered trademark of the Bergquist Company.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

12 3 4

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BC817-16LT1	MOTOROLA	获取价格	CASE 318-08, STYLE 6 SOT-23 (TO-236AB)
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