Datasheet > BC817-16LT1/D

BC817-16LT1/D

更新时间： 2024-09-30 23:34:47

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	39K
描述
General Purpose Transistor NPN

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数据手册

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BC817-16LT1/D 数据手册

ON Semiconductort

BC817-16LT1

BC817-25LT1

BC817-40LT1

General Purpose Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Symbol

Value

Unit

CEO

CBO

EBO

Emitter–Base Voltage

5.0

Collector Current — Continuous

THERMAL CHARACTERISTICS

Characteristic

500

mAdc

Symbol

Max

Unit

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

Total Device Dissipation FR–5 Board, (1)

T = 25°C

Derate above 25°C

225

1.8

mW/°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

556

°C/W

COLLECTOR

Alumina Substrate, (2) T = 25°C

300

2.4

mW/°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

DEVICE MARKING

417

°C/W

°C

BASE

T , T

–55 to +150

stg

BC817–16LT1 = 6A; BC817–25LT1 = 6B; BC817–40LT1 = 6C

EMITTER

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Typ

Max

Unit

Collector–Emitter Breakdown Voltage

(I = –10 mA)

—

(BR)CEO

Collector–Emitter Breakdown Voltage

(BR)CES

(BR)EBO

(V = 0, I = –10 µA)

Emitter–Base Breakdown Voltage

5.0

(I = –1.0 mA)

Collector Cutoff Current

CBO

(V = 20 V)

(V = 20 V, T = 150°C)

—

100

5.0

µA

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

March, 2001 – Rev. 3

BC817–16LT1/D

12 3 4

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