Datasheet > BC817-16_09

BC817-16_09

更新时间： 2024-10-01 12:50:03

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
4页	113K
描述
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

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中文翻译

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数据手册

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BC817-16_09 数据手册

BC817-16 / -25 / -40

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

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Features

Mechanical Data

•

Ideally Suited for Automated Insertion

Epitaxial Planar Die Construction

For Switching, AF Driver and Amplifier Applications

Complementary PNP Types Available (BC807)

Lead, Halogen and Antimony Free, RoHS Compliant

"Green" Device (Notes 3 and 4)

•

Case: SOT-23

Case Material: Molded Plastic, “Green” Molding Compound,

Note 4. UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating) Solderable per MIL-STD-202, Method 208

Pin Connections: See Diagram

Marking Information: See Page 3

Ordering Information: See Page 3

Weight: 0.008 grams (approximate)

•

Qualified to AEC-Q101 Standards for High Reliability

Top View

Device Schematic

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

V_CEO

V_EBO

I_C

Value

5.0

Unit

Collector Current

800

Peak Collector Current

Peak Emitter Current

1000

I_CM

I_EM

Thermal Characteristics

Characteristic

Power Dissipation at T_SB= 50°C (Note 1)

Symbol

P_D

Value

310

Unit

Thermal Resistance, Junction to Substrate Backside (Note 1)

Thermal Resistance, Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

320

°C/W

R_θ

403

°C/W

°C

R_θ

T_J, T_STG

-65 to +150

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic (Note 2)

Current Gain Group -16

Symbol

Min

100

160

250

Max

Unit

Test Condition

250

400

600

—

-25

-40

—

V_CE= 1.0V, I_C= 100mA

DC Current Gain

h_FE

Current Gain Group -16

-25

-40

100

170

—

V_CE= 1.0V, I_C= 300mA

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

—

0.7

1.2

V_CE(SAT)

V_BE

I_C= 500mA, I_B= 50mA

V_CE= 1.0V, I_C= 300mA

V_CE= 45V

V_CE= 25V, T_j= 150°C

V_EB= 4.0V

100

5.0

µA

Collector-Emitter Cutoff Current

Emitter-Base Cutoff Current

Gain Bandwidth Product

—

I_CES

I_EBO

f_T

100

MHz

V_CE= 5.0V, I_C= 10mA,

f = 50MHz

100

—

Collector-Base Capacitance

C_CBO

V_CB= 10V, f = 1.0MHz

Notes:

1. Device mounted on Ceramic Substrate 0.7mm; 2.5cm²area.

2. Short duration pulse test used to minimize self-heating effect.

3. No purposefully added lead. Halogen and Antimony Free.

4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code

V9 are built with Non-Green Molding Compound and may contain Halogens or Sb₂O₃Fire Retardants.

1 of 4

www.diodes.com

April 2009

BC817-16 / -25 / -40

Document number: DS11107 Rev. 18 - 2

12 3 4

中文翻译

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与BC817-16_09相关器件

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BC817-16_10	TSC	获取价格	300mW, NPN Small Signal Transistor
BC817-16_11	MCC	获取价格	NPN Small Signal Transistor 310mW
BC817-16_14	TSC	获取价格	300mW, NPN Small Signal Transistor
BC817-16-13	DIODES	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC
BC817-16-3L	BL Galaxy Electrical	获取价格	45V,0.5A,General Purpose NPN Bipolar Transistor
BC817-16-6L	BL Galaxy Electrical	获取价格	45V,0.5A,General Purpose NPN Bipolar Transistor
BC817-16-7	DIODES	获取价格	NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
BC817-16-7-F	BL Galaxy Electrical	获取价格	NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
BC817-16-AE3-R	UTC	获取价格	NPN GENERAL PURPOSE AMPLIFIER
BC817-16-AU	PANJIT	获取价格	SOT-23

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