BC817-16/-25/40
300mW, NPN Small Signal Transistor
Small Signal Diode
SOT-23
3.
2.
3
A
F
1.
2
1
B
E
Features
Low power loss, high current capability, low V
F
C
G
Surface device type mounting
D
Moisture sensitivity level 1
H
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Unit (mm)
Unit (inch)
Min Max
Dimensions
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Min
Max
A
B
C
D
E
F
2.80
1.20
0.30
1.80
2.25
0.90
3.00 0.110 0.118
1.40 0.047 0.055
0.50 0.012 0.020
2.00 0.071 0.079
2.55 0.089 0.100
1.20 0.035 0.047
Mechanical Data
Case : SOT- 23 small outline plastic package
Terminal: Matte tin plated, lead free, solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
Weight : 0.008gram (approximately)
G
H
0.550 REF
0.022 REF
0.08
0.19 0.003 0.007
Ordering Information
Suggested PAD Layout
Packing
Code
Part No.
Package Packing
0.95
0.037
BC817-16/-25/-40
BC817-16/-25/-40
RF
SOT-23 3K / 7" Reel
SOT-23 3K / 7" Reel
RFG
2.0
0.079
0.9
0.035
0.8
0.031
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
PD
Value
Units
mW
V
Power Dissipation
300
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
50
45
V
5
500
V
mA
°C
Thermal Reistance (Junction to Ambient)
Junction Temperature
Storage Temperature Range
RθJA
TJ
388
150
°C
TSTG
-55 to + 150
°C
Electrical Characteristics
Type Number
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
BC817-16
BC817-25
BC817-40
Units
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
IC= 10μA
IC= 10mA
IE= 1μA
IE=0
IB=0
50
45
V
IC=0
5
V
ICB= 45V
VEB= 4V
IE=0
0.1
0.1
0.7
1.2
100
10
μA
μA
V
IEBO
Emitter Cut-off Current
IC=0
VCE(sat)
VBE(sat)
fT
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
IC= 500mA
IC= 500mA
IB=50mA
IB=50mA
f=100MHz
f=1.0MHz
IC= 100mA
IC= 100mA
V
Transition frequency
Junction Capacitance
VCE= 5V IC= 10mA
VR= 0V
MHz
pF
CJ
VCE= 1V
100
>40
-
600
>40
hFE
hFE
DC current gain
DC current gain
VCE= 1V
>40
160-400
100-250
250-600
Notes: 1.The suggested land pattern dimensions have been provided for reference only, as actual pad layouts may vary despending on application.
Version : F10