Datasheet > BC817-16/-25/-40RFG

BC817-16/-25/-40RFG

更新时间： 2024-10-01 12:20:27

品牌	Logo	应用领域
TSC		晶体晶体管
页数	文件大小	规格书
2页	902K
描述
300mW, NPN Small Signal Transistor

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BC817-16/-25/-40RFG 数据手册

BC817-16/-25/40

300mW, NPN Small Signal Transistor

Small Signal Diode

SOT-23

Features

Low power loss, high current capability, low V

Surface device type mounting

Moisture sensitivity level 1

Matte Tin(Sn) lead finish with Nickel(Ni) underplate

Pb free version and RoHS compliant

Unit (mm)

Unit (inch)

Min Max

Dimensions

Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

Min

Max

2.80

1.20

0.30

1.80

2.25

0.90

3.00 0.110 0.118

1.40 0.047 0.055

0.50 0.012 0.020

2.00 0.071 0.079

2.55 0.089 0.100

1.20 0.035 0.047

Mechanical Data

Case : SOT- 23 small outline plastic package

Terminal: Matte tin plated, lead free, solderable

per MIL-STD-202, Method 208 guaranteed

High temperature soldering guaranteed: 260°C/10s

Weight : 0.008gram (approximately)

0.550 REF

0.022 REF

0.08

0.19 0.003 0.007

Ordering Information

Suggested PAD Layout

Packing

Code

Part No.

Package Packing

0.95

0.037

BC817-16/-25/-40

SOT-23 3K / 7" Reel

RFG

2.0

0.079

0.9

0.035

0.8

0.031

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Maximum Ratings

Type Number

Symbol

Value

Units

Power Dissipation

300

V_CBO

V_CEO

V_EBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

500

°C

Thermal Reistance (Junction to Ambient)

Junction Temperature

Storage Temperature Range

RθJA

T^J

388

150

°C

T_STG

-55 to + 150

°C

Electrical Characteristics

Type Number

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

BC817-16

BC817-25

BC817-40

Units

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

I_C= 10μA

I_C= 10mA

I_E= 1μA

I_E=0

I_B=0

I_C=0

I_CB= 45V

V_EB= 4V

I_E=0

0.1

0.7

1.2

100

μA

I_EBO

Emitter Cut-off Current

I_C=0

V_CE(sat)

V_BE(sat)

f_T

Collector-Emitter saturation voltage

Base-Emitter saturation voltage

I_C= 500mA

I_B=50mA

f=100MHz

f=1.0MHz

I_C= 100mA

Transition frequency

Junction Capacitance

V_CE= 5V I_C= 10mA

V_R= 0V

MHz

C_J

V_CE= 1V

100

>40

600

>40

h_FE

DC current gain

V_CE= 1V

>40

160-400

100-250

250-600

Notes: 1.The suggested land pattern dimensions have been provided for reference only, as actual pad layouts may vary despending on application.

Version : F10

中文翻译

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与BC817-16/-25/-40RFG相关器件

型号	品牌	获取价格	描述	数据表
BC817-16/E8	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 45V V(BR)CEO \| 800MA I(C) \| SOT-23
BC817-16/E9	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 45V V(BR)CEO \| 800MA I(C) \| SOT-23
BC817-16_08	MCC	获取价格	NPN Small Signal Transistor 310mW
BC817-16_09	SECOS	获取价格	NPN Plastic Encapsulate Transistors
BC817-16_09	DIODES	获取价格	NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
BC817-16_10	TSC	获取价格	300mW, NPN Small Signal Transistor
BC817-16_11	MCC	获取价格	NPN Small Signal Transistor 310mW
BC817-16_14	TSC	获取价格	300mW, NPN Small Signal Transistor
BC817-16-13	DIODES	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC
BC817-16-3L	BL Galaxy Electrical	获取价格	45V,0.5A,General Purpose NPN Bipolar Transistor

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