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BC808W

更新时间: 2024-11-23 22:48:15
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管光电二极管
页数 文件大小 规格书
5页 50K
描述
PNP Silicon AF Transistors

BC808W 技术参数

生命周期:ObsoleteReach Compliance Code:compliant
风险等级:5.06Is Samacsys:N
最大集电极电流 (IC):1 A配置:Single
最小直流电流增益 (hFE):100极性/信道类型:PNP
子类别:Other Transistors表面贴装:YES
Base Number Matches:1

BC808W 数据手册

 浏览型号BC808W的Datasheet PDF文件第2页浏览型号BC808W的Datasheet PDF文件第3页浏览型号BC808W的Datasheet PDF文件第4页浏览型号BC808W的Datasheet PDF文件第5页 
BC807W, BC808W  
PNP Silicon AF Transistors  
3
For general AF applications  
High collector current  
High current gain  
Low collector-emitter saturation voltage  
Complementary types: BC817W, BC818W (NPN)  
2
1
VSO05561  
Type  
Marking  
5As  
Pin Configuration  
Package  
SOT323  
SOT323  
SOT323  
SOT323  
SOT323  
SOT323  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
BC807-16W  
BC807-25W  
BC807-40W  
BC808-16W  
BC808-25W  
BC808-40W  
5Bs  
5Cs  
5Es  
5Fs  
5Gs  
Maximum Ratings  
Parameter  
Symbol  
BC 807W  
BC 808W  
Unit  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
DC collector current  
Peak collector current  
Base current  
V
V
V
45  
50  
5
25  
30  
5
V
CEO  
CBO  
EBO  
I
500  
1
mA  
A
C
I
CM  
I
100  
200  
250  
150  
mA  
B
Peak base current  
I
BM  
Total power dissipation, T = 130 °C  
P
mW  
°C  
S
tot  
Junction temperature  
Storage temperature  
T
j
T
-65 ... 150  
stg  
Thermal Resistance  
1)  
Junction - soldering point  
R
80  
K/W  
thJS  
1
For calculation of R  
thJA  
please refer to Application Note Thermal Resistance  
1
Nov-29-2001  

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