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BC808-AH PDF预览

BC808-AH

更新时间: 2023-12-06 19:51:51
品牌 Logo 应用领域
先科 - SWST 晶体管
页数 文件大小 规格书
5页 1517K
描述
小信号晶体管

BC808-AH 数据手册

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BC807 / BC808-AH  
PNP Silicon Epitaxial Planar Transistors  
For switching, AF driver and amplifier applications  
These transistors are subdivided into three groups -16,  
-25 and -40, according to their current gain.  
As complementary types the NPN transistors BC817  
and BC818 are recommended.  
1.Base 2.Emitter 3.Collector  
SOT-23 Plastic Package  
Features  
• AEC-Q101 Qualified and PPAP Capable  
• Halogen and Antimony Free(HAF), RoHS compliant  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Symbol  
-VCBO  
Value  
Unit  
V
Collector Base Voltage  
BC807  
BC808  
BC807  
BC808  
50  
30  
45  
25  
Collector Emitter Voltage  
-VCEO  
V
Emitter Base Voltage  
Collector Current  
-VEBO  
-IC  
5
500  
V
mA  
mW  
Power Dissipation  
Ptot  
Tj  
300  
O
Junction Temperature  
Storage Temperature Range  
150  
C
O
Tstg  
- 55 to + 150  
C
Thermal Characteristics  
Parameter  
Symbol  
RθJA  
Max.  
417  
Unit  
/W  
Thermal Resistance from Junction to Ambient 1)  
1) Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.  
®
1 / 5  
Dated31/12/2021 Rev02  

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