Datasheet > BC808F

BC808F

更新时间： 2024-09-23 08:49:39

品牌	Logo	应用领域
可天士 - KODENSHI		/
页数	文件大小	规格书
4页	269K
描述
High current application

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中文翻译

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数据手册

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BC808F 数据手册

BC808F

PNP Silicon Transistor

Descriptions

PIN Connection

• High current application

• Switching application

Features

• Suitable for AF-Driver stage and

low power output stages

• Complementary pair with BC818F

SOT-23F

Ordering Information

Type NO.

Marking

MA □ □

Package Code

BC808F

SOT-23F

①

② ③

①Device Code ②hFE Rank ③Year&Week Code

Absolute maximum ratings

(Ta=25°C)

Characteristic

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

-30

Unit

Collector-Base voltage

Collector-Emitter voltage

Emitter-base voltage

Collector current

-25

-5

-800

200

°C

Collector dissipation

Junction temperature

Storage temperature

P_C

T_j

150

T_stg

-55~150

°C

Electrical Characteristics

(Ta=25°C)

Characteristic

Symbol

BV_CEO

Test Condition

Min. Typ. Max. Unit

Collector-Emitter breakdown voltage

Base-Emitter Turn On voltage

Collector-Emitter saturation voltage

Collector cut-off current

I_C=-1mA, I_B=0

-25

V_BE(ON)

V_CE(sat)

I_CBO

V_CE=-1V, I_C=-300mA

I_C=-500mA, I_B=-50mA

V_CB=-25V, I_E=0

-1.2

-700

-100

630

100

DC current gain

V_CE=-1V, I_C=-100mA

h_FE

V_CB=-5V, I_E=10mA,

f=100MHz

Transition frequency

f_T

100

MHz

Collector output capacitance

Cob

V_CB=-10V, I_E=0, f=1MHz

* : h_FErank / 16(A) : 100 ~ 250, 25(B) : 160 ~ 400, 40(C) : 250 ~ 630

KSD-T5C084-000

12 3 4

中文翻译

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