Datasheet > BC559/D

BC559/D

更新时间： 2024-11-28 23:34:47

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	55K
描述
Low Noise Transistors

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中文翻译

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数据手册

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BC559/D 数据手册

Low Noise Transistors

PNP Silicon

BC559, B, C

BC560C

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

BC559 BC560

Unit

Vdc

CEO

CBO

EBO

–30

–45

–50

Vdc

–5.0

Vdc

Collector Current — Continuous

–100

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

Watt

mW/°C

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

COLLECTOR

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

83.3

BASE

EMITTER

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I = –10 mAdc, I = 0)

Vdc

(BR)CEO

(BR)CBO

(BR)EBO

BC559

BC560

–30

–45

—

Collector–Base Breakdown Voltage

(I = –10 µAdc, I = 0)

Vdc

BC559

BC560

–30

–50

—

Emitter–Base Breakdown Voltage

(I = –10 mAdc, I = 0)

–5.0

—

Collector Cutoff Current

(V = –30 Vdc, I = 0)

CBO

—

–15

–5.0

nAdc

µAdc

(V = –30 Vdc, I = 0, T = +125°C)

Emitter Cutoff Current

(V = –4.0 Vdc, I = 0)

—

–15

nAdc

EBO

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

February, 2001 – Rev. 2

BC559/D

12 3 4

中文翻译

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