5秒后页面跳转
BC558B PDF预览

BC558B

更新时间: 2024-11-28 08:49:35
品牌 Logo 应用领域
美微科 - MCC 晶体放大器晶体管
页数 文件大小 规格书
5页 284K
描述
PNP Silicon Amplifier Transistor 625mW

BC558B 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.08
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):180
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):1.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):360 MHz
Base Number Matches:1

BC558B 数据手册

 浏览型号BC558B的Datasheet PDF文件第2页浏览型号BC558B的Datasheet PDF文件第3页浏览型号BC558B的Datasheet PDF文件第4页浏览型号BC558B的Datasheet PDF文件第5页 
BC556,B  
BC557,A,B,C  
BC558,B  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
PNP Silicon  
Amplifier Transistor  
625mW  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
150oC Junction Temperature  
Through Hole Package  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
Marking:Type Number  
TO-92  
A
E
Mechanical Data  
Case: TO-92, Molded Plastic  
Polarity: indicated as below.  
B
Maximum Ratings @ 25oC Unless Otherwise Specified  
Charateristic  
Symbol Value Unit  
Collector-Emitter Voltage BC556  
-65  
C
VCEO  
BC557  
BC558  
BC556  
BC557  
BC558  
-45  
-30  
-80  
-50  
-30  
V
Collector-Base Voltage  
VCBO  
V
V
D
VEBO  
IC  
Emitter-Base Voltage  
Collector Current(DC)  
-5.0  
-100  
mA  
mW  
625  
5.0  
1.5  
12  
o
1-Collector  
2-Base  
Pd  
Pd  
Power Dissipation@TA=25 C  
Power Dissipation@TC=25oC  
mW/oC  
W
1
2
3
3-Emitter  
G
mW/oC  
oC/W  
DIMENSIONS  
Thermal Resistance, Junction to  
Ambient Air  
Thermal Resistance, Junction to  
Case  
R
INCHES  
MM  
200  
JA  
DIM  
A
B
C
D
E
G
MIN  
.170  
.170  
.550  
.010  
.130  
.096  
MAX  
.190  
.190  
.590  
.020  
.160  
.104  
MIN  
4.33  
4.30  
13.97  
0.36  
3.30  
2.44  
MAX  
NOTE  
4.83  
4.83  
14.97  
0.56  
3.96  
2.64  
oC/W  
R
83.3  
JC  
Operating & Storage Temperature T, TSTG -55~150 oC  
j
www.mccsemi.com  
1 of 5  
Revision: A  
2011/01/01  

与BC558B相关器件

型号 品牌 获取价格 描述 数据表
BC558-B INFINEON

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon, TO-92D, 3 PIN
BC558B(AMMOPAK) DIODES

获取价格

Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
BC558B(BOX) DIODES

获取价格

Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
BC558B/D11Z TI

获取价格

30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
BC558B/D26Z TI

获取价格

PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
BC558B/D27Z TI

获取价格

PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
BC558B/D74Z TI

获取价格

PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
BC558B/D75Z TI

获取价格

PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
BC558B/E6 VISHAY

获取价格

Transistor
BC558B/E7 ETC

获取价格

TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-92