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BC558B PDF预览

BC558B

更新时间: 2024-11-28 06:41:35
品牌 Logo 应用领域
RECTRON 晶体晶体管
页数 文件大小 规格书
3页 89K
描述
PNP Silicon Planar Epitaxial Transistors

BC558B 数据手册

 浏览型号BC558B的Datasheet PDF文件第2页浏览型号BC558B的Datasheet PDF文件第3页 
BC556,A,B,C  
BC557,A,B,C  
BC558,A,B,C  
PNP Silicon Planar Epitaxial Transistors  
1
2
3
TO-92 SMD Package  
Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise)  
SYMBOL  
VCEO  
VCES  
VCBO  
VEBO  
IC  
BC556  
BC557  
45  
BC558  
30  
UNITS  
DESCRIPTION  
Collector Emitter Voltage  
Collector Emmitter Voltage  
Collector Base Voltage  
65  
V
V
V
V
80  
50  
30  
80  
50  
5
100  
200  
200  
200  
30  
5
5
Emitter Base Voltage  
Collector Current Continuous  
Peak  
mA  
ICM  
IEM  
IBM  
mA  
mA  
Emitter Current - Peak  
Base Current - Peak  
Total power dissipation up to  
Ptot  
500  
mW  
Tamb = 25 oC  
oC  
Tstg  
Tj  
-55 to +150  
150  
Storge Temperature  
Junction Temperature  
oC  
Thermal Resistance  
From junction to ambient  
oC/W  
Rth(j-a)  
250  
www.rectron.com  
1 of 3  

BC558B 替代型号

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TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-92