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BC556D26Z PDF预览

BC556D26Z

更新时间: 2024-11-25 15:28:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关晶体管
页数 文件大小 规格书
4页 55K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

BC556D26Z 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.37
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:65 V
配置:SINGLE最小直流电流增益 (hFE):110
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

BC556D26Z 数据手册

 浏览型号BC556D26Z的Datasheet PDF文件第2页浏览型号BC556D26Z的Datasheet PDF文件第3页浏览型号BC556D26Z的Datasheet PDF文件第4页 
BC556/557/558/559/560  
Switching and Amplifier  
High Voltage: BC556, V  
Low Noise: BC559, BC560  
Complement to BC546 ... BC 550  
= -65V  
CEO  
TO-92  
1. Collector 2. Base 3. Emitter  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Capacitance  
CBO  
: BC556  
: BC557/560  
: BC558/559  
-80  
-50  
-30  
V
V
V
Collector-Emitter Voltage  
CEO  
: BC556  
: BC557/560  
: BC558/559  
-65  
-45  
-30  
V
V
V
Emitter-Base Voltage  
-5  
-100  
V
EBO  
I
Collector Current (DC)  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
mA  
mW  
°C  
C
P
500  
C
T
T
150  
J
-65 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector Cut-off Current  
DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
-15  
Units  
I
V
V
= -30V, I =0  
nA  
CBO  
CB  
E
h
= -5V, I =2mA  
110  
800  
FE  
CE  
C
V
(sat)  
Collector-Emitter Saturation Voltage I = -10mA, I = -0.5mA  
-90  
-250  
-300  
-650  
mV  
mV  
CE  
C
B
I = -100mA, I = -5mA  
C
B
V
(sat) Collector-Base Saturation Voltage  
I = -10mA, I = -0.5mA  
-700  
-900  
mV  
mV  
BE  
BE  
C
B
I = -100mA, I = -5mA  
C
B
V
(on) Base-Emitter On Voltage  
V
= -5V, I = -2mA  
-600  
-660  
-750  
-800  
mV  
mV  
CE  
CE  
C
V
V
V
V
= -5V, I = -10mA  
C
f
Current Gain Bandwidth Product  
Output Capacitance  
= -5V, I = -10mA, f=10MHz  
150  
MHz  
pF  
T
CE  
CB  
CE  
C
C
= -10V, I =0, f=1MHz  
6
ob  
E
NF  
Noise Figure  
: BC556/557/558  
: BC559/560  
: BC559  
= -5V, I = -200µA  
2
1
1.2  
1.2  
10  
4
4
dB  
dB  
dB  
dB  
C
f=1KHz, R =2KΩ  
G
V
= -5V, I = -200µA  
CE  
C
: BC560  
R =2KΩ, f=30~15000MHz  
2
G
h
Classification  
FE  
Classification  
A
B
C
h
110 ~ 220  
200 ~ 450  
420 ~ 800  
FE  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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