Datasheet > BC547CRL1

BC547CRL1

更新时间： 2024-11-11 03:59:07

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	168K
描述
100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN

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BC547CRL1 数据手册

ON Semiconductort

BC546

BC546B

BC547A

BC547B

BC547C

BC548B

BC548C

Amplifier Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol BC546 BC547 BC548

Unit

Vdc

CEO

CBO

EBO

Vdc

6.0

100

Vdc

Collector Current — Continuous

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

Watt

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

COLLECTOR

83.3

BASE

EMITTER

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I = 1.0 mA, I = 0)

BC546

BC547

BC548

—

(BR)CEO

(BR)CBO

(BR)EBO

Collector–Base Breakdown Voltage

(I = 100 µAdc)

BC546

BC547

BC548

—

Emitter–Base Breakdown Voltage

BC546

BC547

BC548

6.0

—

(I = 10 mA, I = 0)

Collector Cutoff Current

(V = 70 V, V = 0)

CES

BC546

BC547

BC548

BC546/547/548

—

0.2

—

4.0

(V = 50 V, V = 0)

(V = 35 V, V = 0)

(V = 30 V, T = 125°C)

µA

Semiconductor Components Industries, LLC, 2001

242

Publication Order Number:

May, 2001 – Rev. 3

BC546/D

12 3 4

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BC547CRLRE	ONSEMI	获取价格	100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN
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