Datasheet > BC490/D

BC490/D

更新时间： 2024-11-12 23:34:43

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High Current Transistor PNP

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SEMICONDUCTOR TECHNICAL DATA

PNP Silicon

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Value

–80

Unit

Vdc

Adc

CEO

CBO

EBO

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

–80

–4.0

–0.5

Collector Current — Continuous

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

Watt

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

83.3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

(1)

Collector–Emitter Breakdown Voltage

–80

–4.0

—

Vdc

(BR)CEO

(I = –10 mAdc, I = 0)

Collector–Base Breakdown Voltage

(I = –100 Adc, I = 0)

(BR)CBO

Emitter–Base Breakdown Voltage

(I = –10 Adc, I = 0)

—

Vdc

(BR)EBO

Collector Cutoff Current

(V = –60 Vdc, I = 0)

–100

nAdc

CBO

ON CHARACTERISTICS*

DC Current Gain

—

(I = –10 mAdc, V

= –2.0 Vdc)

100

—

140

—

400

250

—

(I = –100 mAdc, V

BC490

BC490A

(I = –1.0 Adc, V

C CE

= –5.0 Vdc)

1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

12 3 4 5 6

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BC490A18	MOTOROLA	获取价格	500mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR
BC490A5	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon
BC490AG	ONSEMI	获取价格	1000mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AA, LEAD FREE, CASE 29-11, TO-92, TO-
BC490ARL	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
BC490ARL1	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
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