Datasheet > BC328RL

BC328RL

更新时间： 2024-11-26 03:39:59

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
34页	347K
描述
800mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN

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BC328RL 数据手册

SEMICONDUCTOR TECHNICAL DATA

PNP Silicon

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

BC327

–45

BC328

–25

Unit

Vdc

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

CEO

CBO

EBO

–50

–30

Vdc

–5.0

Vdc

Collector Current — Continuous

–800

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

Watt

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

83.3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I = –10 mA, I = 0)

Vdc

(BR)CEO

BC327

BC328

–45

–25

—

Collector–Emitter Breakdown Voltage

(I = –100 µA, I = 0)

(BR)CES

(BR)EBO

BC327

BC328

–50

–30

—

Emitter–Base Breakdown Voltage

(I = –10 A, I = 0)

–5.0

—

Vdc

Collector Cutoff Current

nAdc

CBO

= –30 V, I = 0)

BC327

BC328

—

–100

= –20 V, I = 0)

Collector Cutoff Current

nAdc

CES

= –45 V, V

= –25 V, V

= 0)

BC327

BC328

—

–100

Emitter Cutoff Current

(V = –4.0 V, I = 0)

—

–100

EBO

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–91

12 3 4 5 6 7...34

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