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BC328-XBK PDF预览

BC328-XBK

更新时间: 2024-11-25 12:20:31
品牌 Logo 应用领域
德欧泰克 - DIOTEC 晶体晶体管
页数 文件大小 规格书
2页 95K
描述
General Purpose Si-Epitaxial Planar Transistors

BC328-XBK 数据手册

 浏览型号BC328-XBK的Datasheet PDF文件第2页 
BC327-xBK / BC328-xBK  
BC327-xBK / BC328-xBK  
General Purpose Si-Epitaxial Planar Transistors  
Si-Epitaxial Planar-Transistoren für universellen Einsatz  
PNP  
PNP  
Version 2010-06-23  
4.6±0.1  
Power dissipation  
Verlustleistung  
625 mW  
Plastic case  
TO-92  
Kunststoffgehäuse  
(10D3)  
Weight approx. – Gewicht ca.  
0.18 g  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
C
B E  
Special packaging bulk  
Sonder-Lieferform Schüttgut  
2 x 1.27  
Dimensions - Maße [mm]  
Maximum ratings (TA = 25°C)  
Grenzwerte (TA = 25°C)  
BC327  
BC328  
30 V  
Collector-Emitter-volt. – Kollektor-Emitter-Spannung E-B short - VCES  
50 V  
45 V  
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open  
- VCEO  
- VEBO  
Ptot  
25 V  
Emitter-Base-voltage – Emitter-Basis-Spannung  
Power dissipation – Verlustleistung  
C open  
5 V  
625 mW 1)  
800 mA  
1 A  
Collector current – Kollektorstrom (dc)  
Peak Collector current – Kollektor-Spitzenstrom  
Base current – Basisstrom  
- IC  
- ICM  
- IB  
100 mA  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-55...+150°C  
-55…+150°C  
Characteristics (Tj = 25°C)  
Kennwerte (Tj = 25°C)  
Min.  
Typ.  
Max.  
DC current gain – Kollektor-Basis-Stromverhältnis 2)  
- VCE = 1 V, - IC = 100 mA  
Group -16  
Group -25  
Group -40  
hFE  
hFE  
hFE  
100  
160  
250  
160  
250  
400  
250  
400  
630  
- VCE = 1 V, - IC = 300 mA  
Group -16  
Group -25  
Group -40  
hFE  
hFE  
hFE  
60  
100  
170  
130  
200  
320  
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)  
- IC = 500 mA, - IB = 50 mA  
- VCEsat  
0.7 V  
1
2
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case  
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden  
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 
 

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