5秒后页面跳转
BC327RL PDF预览

BC327RL

更新时间: 2024-01-30 07:17:08
品牌 Logo 应用领域
安森美 - ONSEMI 放大器晶体管
页数 文件大小 规格书
5页 101K
描述
TRANSISTOR 800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226AA, 3 PIN, BIP General Purpose Small Signal

BC327RL 技术参数

生命周期:Transferred包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.58
其他特性:EUROPEAN PART NUMBER最大集电极电流 (IC):0.8 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):100JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:PNP
功耗环境最大值:1.5 W认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):260 MHz
VCEsat-Max:0.7 VBase Number Matches:1

BC327RL 数据手册

 浏览型号BC327RL的Datasheet PDF文件第1页浏览型号BC327RL的Datasheet PDF文件第3页浏览型号BC327RL的Datasheet PDF文件第4页浏览型号BC327RL的Datasheet PDF文件第5页 
BC327, BC32716, BC32725, BC32740  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage  
V
Vdc  
Vdc  
(BR)CEO  
(I = 10 mA, I = 0)  
45  
C
B
CollectorEmitter Breakdown Voltage  
(I = 100 mA, I = 0)  
V
(BR)CES  
(BR)EBO  
50  
C
E
EmitterBase Breakdown Voltage  
(I = 10 mA, I = 0)  
V
5.0  
Vdc  
E
C
Collector Cutoff Current  
(V = 30 V, I = 0)  
I
nAdc  
nAdc  
nAdc  
CBO  
100  
CB  
E
Collector Cutoff Current  
(V = 45 V, V = 0)  
I
CES  
EBO  
100  
100  
CE  
BE  
Emitter Cutoff Current  
(V = 4.0 V, I = 0)  
I
EB  
C
ON CHARACTERISTICS  
DC Current Gain  
h
FE  
(I = 100 mA, V = 1.0 V)  
BC327  
BC32716  
BC32725  
BC32740  
100  
100  
160  
250  
40  
630  
250  
400  
630  
C
CE  
(I = 300 mA, V = 1.0 V)  
C
CE  
BaseEmitter On Voltage  
(I = 300 mA, V = 1.0 V)  
V
1.2  
Vdc  
Vdc  
BE(on)  
C
CE  
CollectorEmitter Saturation Voltage  
(I = 500 mA, I = 50 mA)  
V
0.7  
CE(sat)  
C
B
SMALLSIGNAL CHARACTERISTICS  
Output Capacitance  
C
f
11  
pF  
ob  
(V = 10 V, I = 0, f = 1.0 MHz)  
CB  
E
CurrentGain Bandwidth Product  
260  
MHz  
T
(I = 10 mA, V = 5.0 V, f = 100 MHz)  
C
CE  
1.0  
0.7  
0.5  
D = 0.5  
0.3  
0.2  
0.2  
0.1  
q
q
q
q
(t) = (t) q  
JC  
= 100°C/W MAX  
JC  
JC  
JA  
JA  
0.05  
0.02  
0.1  
P
(pk)  
(t) = r(t) q  
JA  
0.07  
0.05  
= 375°C/W MAX  
SINGLE PULSE  
SINGLE PULSE  
t
1
D CURVES APPLY FOR  
POWER  
PULSE TRAIN SHOWN  
0.01  
0.03  
0.02  
t
2
DUTY CYCLE, D = t /t  
1
2
READ TIME AT t  
1
T
T = P  
q
(t)  
J(pk)  
C
(pk) JC  
0.01  
0.001 0.002  
0.005 0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
1.0  
2.0  
5.0  
10  
20  
50  
100  
t, TIME (SECONDS)  
Figure 1. Thermal Response  
http://onsemi.com  
2

与BC327RL相关器件

型号 品牌 描述 获取价格 数据表
BC327RL1 ETC TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 800MA I(C) | TO-92

获取价格

BC327RL1G ONSEMI Amplifier Transistors

获取价格

BC327RLRA ONSEMI 800mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226AA, 3 PIN

获取价格

BC327RLRE ONSEMI 800mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226AA, 3 PIN

获取价格

BC327RLRM ONSEMI TRANSISTOR 800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226AA, 3

获取价格

BC327RLRP ONSEMI 800mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226AA, 3 PIN

获取价格