Datasheet > BC302-4

BC302-4

更新时间： 2024-09-27 23:34:39

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	48K
描述
TRANSISTOR \| BJT \| NPN \| 45V V(BR)CEO \| 500MA I(C) \| TO-39

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数据手册

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BC302-4 数据手册

IS/ISO 9002

Lic# QSC/L- 000019.2

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

NPN EPITAXIAL PLANAR SILICON TRANSISTORS

BC300, BC301, BC302

TO-39

Metal Can Package

NPN SILICON LOW -AND- MEDIUM POWER TRANSISTORS.

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

BC300 BC301

BC302 UNITS

V_CEO

Collector Emitter Voltage

Collector Base Voltage

Emitter Base Voltage

Collector Current

120

7.0

V_CBO

V_EBO

I_C

7.0

500

850

ºC

P_D

Power Dissipation @ Ta=25ºC

Junction Temperature

Storage Temperature Range

T_j

175

T_stg

-65 to +200

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

BC300

BC301

BC302

DESCRIPTION

SYMBOL TEST CONDITION

UNITS

MIN MAX MIN MAX MIN MAX

I_CBO

V_CB=120V, I_E=0

V_CB=90V, I_E=0

nΑ

Collector Cut off Current

V_CB=60V, I_E=0

h_FE

I_C=150mA,V_CE=10V

DC Current Gain

BC300/301/302

BC300/301/302-4

BC300/301/302-5

240

I_C=150mA,V_CE=10V

140

BC300/301/302-6

240

0.5

120

ALL

V_CE(Sat)I_C=150mA,I_B=15mA

Collector Emitter Sat Voltage

DYNAMIC CHARACTERISTICS

Transition Frequency

ALL

f_T

V_CE=10V,I_C=50mA,

f=20MHz

100

400

MHz

Continental Device India Limited

Data Sheet

Page 1 of 3

12 3

中文翻译

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