Datasheet > BC307

BC307

更新时间： 2023-12-06 20:02:33

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	900K
描述
双极型晶体管

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中文翻译

获取价格

数据手册

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BC307 数据手册

BC307/308/309(PNP)

TO-92 Bipolar Transistors

1. COLLECTOR

TO-92

2. BASE

3. EMITTER

Features

ꢀ

Amplifier dissipation NPN Silicon

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

BC307

BC308/309

BC307

-45

-25

-6

V_CEO

Emitter-Base Voltage

V_EBO

BC308/309

-5

Collector Current -Continuous

-0.1

I_C

Collector Power Dissipation

500

357

P_C

Thermal Resistance,

Junction to Ambient

Dimensions in inches and (millimeters)

R_θJA

℃/W

Thermal Resistance, Junction to Case

R_θJC

T_j

125

150

℃/W

℃

Junction Temperature

Storage Temperature

-55-150

T_stg

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

I_C=-10μA, I_E=0

BC307

BC308/309

BC307

-50

-30

-45

-25

Collector-base breakdown voltage

V_(BR)CBO

I_C=-2mA, I_B=0

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CEO

BC308/309

V_(BR)EBOI_E=-10μA, I_C=0

-5

V_CB=-45V,I_E=0

BC307

BC308/309

I_CBO

-15

V_CB=-25V,I_E=0

Emitter cut-off current

DC current gain

I_EBO

h_FE

V_EB=-5V, I_C=0

-15

800

-0.3

-0.6

-0.75

-1

V_CE=-5V, I_C=-2mA

I_C=-10mA, I_B=-0.5mA

I_C=-100mA, I_B=-5mA

I_C=-10mA, I_B=-0.5mA

I_C=-100mA, I_B=-5mA

V_CE=-5V, I_C=-2mA

120

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

Base-emitter voltage

V_BE

f_T

-0.55

-0.75

Transition frequency

V_CE=-5V, I_C=-10mA, f=50MHz

V_CB=-10V, I_E=0, f=1MHz

130

MHz

Collector output capacitance

C_ob

V_CE=-5V, I_C=-0.2mA ,

f=1KHz, R_G=2KΩ

BC307/BC308

BC309

Noise figure

V_CE=-5V, I_C=-0.2mA ,

f=30-15KHz, R_G=2KΩ

BC309

CLASSIFICATION OF h_FE

Rank

120-220

180-460

380-800

Range

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Revision:20170701-P1

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